switching MOSFET Jingdao Microelectronics F4N60L designed for power supply and adaptor efficiency
Key Attributes
Model Number:
F4N60L
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
RDS(on):
2.5Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
66pF
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
564pF@25V
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
F4N60L
Package:
TO-220F-3L
Product Description
Product Description
The F4N60L is a high voltage power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This power MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong Jingdao Microelectronics Co., Ltd.
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
- Case: TO-220F-3L
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
| Absolute Maximum Ratings (Ta=25C, Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDSS | 600 | V | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Continuous Drain Current | ID | 4.0 | A | Tc=25C | ||
| Pulsed Drain Current | IDM | 173 | A | Note 2 | ||
| Avalanche Energy Single Pulsed | EAS | 600 | mJ | Note 3 | ||
| Power Dissipation | PD | 173 | W | Tc = 25C | ||
| Operating junction and storage temperature | TJ,TSTG | -55 | +150 | C | ||
| Thermal Resistance | ||||||
| Thermal resistance, junction case | RthJC | 4 | C/W | Tc=25C | ||
| Thermal resistance, junction case | RthJC | 63 | C/W | Tc=100C | ||
| Thermal resistance, junction ambient(min. footprint) | RthJA | C/W | ||||
| Electrical Characteristics (Ta=25C, Unless Otherwise Specified) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250uA | ||
| Gate-Source Leakage Current | IGSS | 1.0 | uA | VGS=-30V,VDS=0V | ||
| On Characteristics | ||||||
| Static Drain-Source On-State Resistance | RDS(ON) | 2.5 | VGS=10V,ID=2.0A | |||
| Drain-Source Leakage Current | IDSS | 1.0 | uA | VDS=600V,VGS=0V | ||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA | ||
| Switching Characteristics | ||||||
| Total Gate Charge | QG | 100 | nC | VDS=480V,VGS=10V, ID=4A (NOTE1,2) | ||
| Gate-Drain Charge | QGD | 12 | nC | |||
| Gate-Source Charge | QGS | 4.0 | nC | |||
| Turn-On Delay Time | tD(ON) | 30 | ns | VDS=300V, RG=25 (NOTE1,2) | ||
| Turn-On Rise Time | tR | 75 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 60 | ns | |||
| Turn-Off Fall Time | tF | 55 | ns | |||
| Drain-Source Diode Characteristics And Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | ISD=4A,VGS=0V | ||
| Reverse Recovery Time | trr | 250 | ns | IF=4A di/dt=100A/us | ||
| Reverse Recovery Charge | Qrr | 4.5 | uC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | 564 | pF | VDS=25V, VGS=0V, f=1.0MHz | ||
| Output Capacitance | COSS | 66 | pF | |||
| Reverse Transfer Capacitance | CRSS | 12 | pF | |||
| Transconductance | gfs | 4.3 | S | VDS=25V,ID=5A | ||
| Other | ||||||
| Gate resistance | RG | 1.1 | ||||
| Maximum Body-Diode Continuous Current | IS | 4 | A | |||
2305040947_Jingdao-Microelectronics-F4N60L_C5632444.pdf
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