Surface Mount Rectifier Diode JSCJ US1G Plastic Encapsulated for High Surge Current and Fast Response

Key Attributes
Model Number: US1G
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@400V
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Recovery Time (trr):
50ns
Voltage - DC Reverse (Vr) (Max):
400V
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.3V@1.0A
Current - Rectified:
1A
Mfr. Part #:
US1G
Package:
SMAG
Product Description

High Efficient Rectifier Diodes

The US1A thru US1M series are high-efficiency rectifier diodes designed for various rectification applications. They offer high surge current capability and are suitable for use in applications requiring reliable rectification and fast response times. The diodes are constructed with plastic encapsulation and are designed for surface mounting.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China (implied by manufacturer name)
  • Material: Plastic-Encapsulated Diode
  • Marking: Color band denotes cathode

Technical Specifications

ItemSymbolUnitUS1AUS1BUS1DUS1GUS1JUS1KUS1MTest Conditions
Repetitive Peak Reverse VoltageVRRMV50100150200400600100060Hz Half-sine wave, Resistance load, TL=75
Average Forward CurrentIF(AV)A1.0P.C.B. Mounted on 0.2"x0.2" (5.0mmx5.0mm) Copper Pad Areas
Surge(Non-repetitive)Forward CurrentIFSMA507510014028042056060Hz Half-sine wave, 1 cycle, TA=25
Maximum RMS VoltageVRMSV35
Peak Forward VoltageVFV1.0IF =1.0A, T=25
Peak Reverse CurrentIRRM1A50VRM=VRRM, TA =25
Peak Reverse CurrentIRRM2A100VRM=VRRM, TA =125
Thermal Resistance(Typical)RJ-A/W55Between junction and ambient
Thermal Resistance(Typical)RJ-L/W25Between junction and lead
Maximum reverse recovery timetrrns50IF=0.5A, IR=1.0A, IRR=0.25A
Operation Junction and Storage Temperature RangeTJ, TSTG -55 ~ +150

2410121845_JSCJ-US1G_C3031833.pdf

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