Power Control P channel Enhancement Mode Power MOSFET JingYang JY3415EX with Low Gate Charge and Lead Free Certification
Key Attributes
Model Number:
JY3415EX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF@10V
Output Capacitance(Coss):
165pF
Input Capacitance(Ciss):
950pF@10V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
JY3415EX
Package:
SOT-23
Product Description
Product Overview
The JY3415EX is a P-channel Enhancement Mode Power MOSFET designed for various power management applications. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This lead-free product is suitable for PWM applications, load switching, and power management, providing reliable performance with a VDS of -20V and ID of -5A.
Product Attributes
- Brand: JY Electronics
- Product Type: P-channel Enhancement Mode Power MOSFET
- Package: SOT-23
- Certifications: Lead free product is acquired
- ESD Rating: HBM 2.0KV
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings (TA=25 unless otherwise specified) | ||||||
| VDSS | Drain-Source Voltage | -20 | V | |||
| VGSS | Gate-Source Voltage | 8 | V | |||
| ID | Continuous Drain Current | TA = 25 | -5 | A | ||
| ID | Continuous Drain Current | TA = 70 | -4 | A | ||
| IDM | Pulsed Drain Current | note1 | -30 | A | ||
| PD | Power Dissipation | TA = 25 | 1.5 | W | ||
| RJA | Thermal Resistance, Junction to Ambient | 104 | /W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Off Characteristic | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V,ID= -250A | -20 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = 8V | - | - | 10 | uA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250A | -0.4 | -0.7 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | note2 VGS =-4.5V, ID =-4A | - | 38 | 48 | m |
| RDS(on) | Static Drain-Source on-Resistance | note2 VGS =-2.5V, ID =-4A | - | 48 | 65 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | - | 950 | - | pF |
| Coss | Output Capacitance | - | 165 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 120 | - | pF | |
| Qg | Total Gate Charge | VDS = -10V, ID = -4A, VGS = -4.5V | - | 12 | - | nC |
| Qgs | Gate-Source Charge | - | 1.4 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 3.6 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD = -10V, ID = -2A, RG = 3, VGEN=-4.5V, RL=2.5 | - | 12 | - | ns |
| tr | Turn-on Rise Time | - | 10 | - | ns | |
| td(off) | Turn-off Delay Time | - | 19 | - | ns | |
| tf | Turn-off Fall Time | - | 25 | - | ns | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -4 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS = -4A | - | - | -1.2 | V |
2405091034_JingYang-JY3415EX_C5156711.pdf
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