Low On Resistance N Channel MOSFET JingYang TNM03K20BX 20V 1.2A for Power Supply Converter Circuits
Key Attributes
Model Number:
TNM03K20BX
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.2A
RDS(on):
400mΩ@1.8V,0.35A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
43pF@10V
Pd - Power Dissipation:
160mW
Gate Charge(Qg):
2nC@4.5V
Mfr. Part #:
TNM03K20BX
Package:
DFN1006-3L
Product Description
Product Overview
This N-Channel 20V, 1.2A N-MOSFET, designed with TrenchFET Power MOSFET technology, offers low on-resistance and low threshold voltage for efficient high-side switching. It features gate-source ESD protection, fast switching speeds, and low-voltage operation, making it ideal for battery-operated systems and low-voltage applications. The device is suitable for driving various loads like relays, solenoids, lamps, and displays, as well as for power supply converter circuits and mobile communication devices.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: S- Prefix for Automotive and Other Applications Requiring
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0VID=250uA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=16VVGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGSIDS=250uA | 0.5 | -- | 1.0 | V |
| Gate Leakage Current | IGSS | VGS=8VVDS=0V | -- | -- | 10 | uA |
| Drain-Source On-state Resistance | RDS(on) | VGS=4.5VID=0.5A | -- | 250 | 400 | m |
| VGS=2.5VID=0.5A | -- | 300 | 500 | m | ||
| VGS=1.8VID=0.35A | -- | 400 | 650 | m | ||
| Switching Characteristics | td(on) | VGS=4.5VVDS=10V RGEN=6ID=2A | -- | 1.2 | -- | ns |
| tr | VGS=4.5VVDS=10V RGEN=6ID=2A | -- | 25 | -- | ns | |
| td(off) | VGS=4.5VVDS=10V RGEN=6ID=2A | -- | 14 | -- | ns | |
| tf | VGS=4.5VVDS=10V RGEN=6ID=2A | -- | 15 | -- | ns | |
| Capacitance | Ciss | VGS=0VVDS=10Vf=1MHZ | -- | 43 | -- | pF |
| Coss | VGS=0VVDS=10Vf=1MHZ | -- | 9 | -- | pF | |
| Crss | VGS=0VVDS=10Vf=1MHZ | -- | 6 | -- | pF | |
| Continuous Diode Forward Current | ISD | VG=VD=0V , Force Current | -- | -- | 3.5 | A |
| Diode Forward Voltage | VSD | ISD=0.5AVGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | trr | IF = 1A di/dt = 100 A/s | -- | 9 | -- | nS |
| Reverse Recovery Charge | Qrr | IF = 1A di/dt = 100 A/s | -- | 1 | -- | nC |
| Continuous Drain Current (TA = 25 C) | ID | Steady State | -- | 900 | 1200 | mA |
| Continuous Drain Current (TA = 85 C) | ID | Steady State | -- | 600 | 800 | mA |
| Pulsed Drain Current | IDM | 5 secs | -- | -- | 2500 | mA |
| Continuous Source Current (diode conduction) | IS | Steady State | -- | 250 | 275 | mA |
| Maximum Power Dissipation (SC-89, TA = 25 C) | PD | for SC 89 | -- | 250 | 275 | mW |
| Maximum Power Dissipation (SC-89, TA = 85 C) | PD | for SC-89 | -- | 140 | 160 | mW |
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 | -- | 150 | C |
2409302200_JingYang-TNM03K20BX_C5307988.pdf
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