High conductance fast switching diode JSCJ BAS16 for general purpose electronic circuit applications

Key Attributes
Model Number: BAS16
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16
Package:
SOT-23
Product Description

Product Overview

The BAS16 is a fast switching diode designed for general-purpose switching applications. It offers high conductance and is suitable for various electronic circuits requiring rapid switching capabilities.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Material: Plastic-Encapsulate Diodes
  • Marking: A6
  • Color: Solid dot = Green molding compound device, if none, the normal device.

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
Reverse breakdown voltageV(BR)IR= 100A75V
Reverse voltage leakage currentIRVR=75V1A
Forward voltageVFIF=1mA0.715V
Forward voltageVFIF=10mA0.855V
Forward voltageVFIF=50mA1V
Forward voltageVFIF=150mA1.25V
Diode capacitanceCDVR=0, f=1MHz2pF
Reveres recovery timetrrIF=IR=10mA,Irr=0.1IR, RL=1006ns
Non-Repetitive Peak Reverse VoltageVRM100V
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR75V
RMS Reverse VoltageVR(RMS)53V
Forward Continuous CurrentIFM300mA
Average Rectified Output CurrentIO150mA
Forward Surge Current @t=8.3msIFSM2.0A
Power DissipationPd225mW
Thermal Resistance Junction to AmbientRJA556/W
Junction and Storage Temperature RangeTJ,TSTG-55+150

2410121739_JSCJ-BAS16_C2991937.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.