Schottky barrier diode JSCJ RB751G-40 featuring low reverse current and compact surface mount design
Key Attributes
Model Number:
RB751G-40
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@30V
Non-Repetitive Peak Forward Surge Current:
200mA
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB751G-40
Package:
SOD-723
Product Description
Product Overview
The RB751G-40 is a Schottky barrier diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for small surface mounting applications. It features low reverse current and low forward voltage, offering high reliability. The diode is marked with '5'.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Type: SOD-723 Plastic-Encapsulate Diode
- Model: RB751G-40
Technical Specifications
| Parameter | Symbol | Limit/Value | Unit | Conditions |
| Peak reverse voltage | VRM | 40 | V | |
| DC reverse voltage | VR | 30 | V | |
| Mean rectifying current | IO | 30 | mA | @Ta=25 |
| Peak forward surge current | IFSM | 200 | mA | |
| Forward voltage | VF | 0.37 | V | IF=1mA @Ta=25 |
| Reverse current | IR | 0.5 | A | VR=30V @Ta=25 |
| Capacitance between terminals | CT | 2 | pF | VR=1V,f=1MHZ @Ta=25 |
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Power dissipation | PD | 150 | mW | |
| Thermal Resistance Junction to Ambient | RJA | 667 | /W |
2410121248_JSCJ-RB751G-40_C8527.pdf
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