Power diode JSCJ SBDF20H200CTB Schottky Barrier Rectifier offering high current capability and loss
Product Overview
The SBD20H200CTB and SBDF20H200CTB are Schottky Barrier Rectifiers designed for high efficiency and low power loss. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: 20H200CTB, F20H200CTB
- Marking: SBD20H200CTB, SBD(F)20H200CTB
- Material: Plastic-Encapsulate Diode
- Color: Solid dot = Green molding compound device (if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | SBD20H200CTB | SBDF20H200CTB |
| Peak repetitive reverse voltage | VRRM | 200 | V | |||||
| Working peak reverse voltage | VRWM | 200 | V | |||||
| DC blocking voltage | VR | 200 | V | |||||
| RMS reverse voltage | VR(RMS) | 140 | V | |||||
| Average rectified output current | IO | 20 | A | |||||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 200 | A | |||||
| Thermal resistance from junction to ambient | RJA | 50 | /W | |||||
| Junction temperature | Tj | 175 | ||||||
| Storage temperature | Tstg | -55 | +175 | |||||
| Reverse voltage | V(BR) | IR = 0.1mA | 200 | V | ||||
| Reverse current | IR | VR = 200V, Tj = 25 | 0.01 | 0.1 | mA | |||
| Reverse current | IR | VR = 200V, Tj = 150 | 1.0 | mA | ||||
| Forward voltage | VF | IF = 10A, Tj = 25 | 0.50 | 0.78 | V | |||
| Forward voltage | VF | IF = 10A, Tj = 150 | 0.60 | V | ||||
| Forward voltage | VF | IF = 20A, Tj = 25 | 0.70 | 1.0 | V | |||
| Forward voltage | VF | IF = 20A, Tj = 150 | 0.84 | V | ||||
| Thermal resistance from junction to case | RJc | Tc = 25 | 2.0 | 3.0 | /W |
2410121815_JSCJ-SBDF20H200CTB_C5295534.pdf
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