Power diode JSCJ SBDF20H200CTB Schottky Barrier Rectifier offering high current capability and loss

Key Attributes
Model Number: SBDF20H200CTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
500nA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
900mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBDF20H200CTB
Package:
TO-220F
Product Description

Product Overview

The SBD20H200CTB and SBDF20H200CTB are Schottky Barrier Rectifiers designed for high efficiency and low power loss. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. Key features include guard ring die construction for transient protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: 20H200CTB, F20H200CTB
  • Marking: SBD20H200CTB, SBD(F)20H200CTB
  • Material: Plastic-Encapsulate Diode
  • Color: Solid dot = Green molding compound device (if none, the normal device)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnitSBD20H200CTBSBDF20H200CTB
Peak repetitive reverse voltageVRRM200V
Working peak reverse voltageVRWM200V
DC blocking voltageVR200V
RMS reverse voltageVR(RMS)140V
Average rectified output currentIO20A
Non-Repetitive peak forward surge current (8.3ms half sine wave)IFSM200A
Thermal resistance from junction to ambientRJA50/W
Junction temperatureTj175
Storage temperatureTstg-55+175
Reverse voltageV(BR)IR = 0.1mA200V
Reverse currentIRVR = 200V, Tj = 250.010.1mA
Reverse currentIRVR = 200V, Tj = 1501.0mA
Forward voltageVFIF = 10A, Tj = 250.500.78V
Forward voltageVFIF = 10A, Tj = 1500.60V
Forward voltageVFIF = 20A, Tj = 250.701.0V
Forward voltageVFIF = 20A, Tj = 1500.84V
Thermal resistance from junction to caseRJcTc = 252.03.0/W

2410121815_JSCJ-SBDF20H200CTB_C5295534.pdf

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