Switching power supply MOSFET Jingdao Microelectronics F10N60 with low RDS ON and avalanche energy tested
Key Attributes
Model Number:
F10N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
10A
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
1.55nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
28.3nC@10V
Mfr. Part #:
F10N60
Package:
ITO-220ABW
Product Description
Product Overview
The F10N60 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: Green molding compound, UL flammability classification 94V-0,Halogen-free.
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Notes |
|---|---|---|---|---|
| DESCRIPTION | ||||
| N-CHANNEL POWER MOSFET | ||||
| Features | ||||
| RDS(ON) 1.0 @ VGS=10V, ID=5.0A | ||||
| Fast switching capability | ||||
| Avalanche energy tested | ||||
| Improved dv/dt capability, high ruggedness | ||||
| Mechanical Data | ||||
| Case | ITO-220ABW | |||
| Approx. Weight | 2.1g (0.07oz) | |||
| Lead free finish | RoHS compliant | |||
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 10 | A | Tc=25 |
| Continuous Drain Current | ID | 6.3 | A | Tc=100 |
| Pulsed Drain Current | IDM | 40 | A | Note 2 |
| Power Dissipation | PD | 65 | W | Tc=25 |
| Avalanche Energy Single Pulsed | EAS | 45 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | TJ, stg | -55 ~ +150 | C | |
| Thermal Data | ||||
| Junction to Ambient | RthJA | 63 | C/W | Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. |
| Junction to Case | RthJC | 2.76 | C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | 1 | uA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=600V,VGS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.0 | VGS=10V,ID=5.0A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Input Capacitance | CISS | 1550 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 140 | pF | |
| Reverse Transfer Capacitance | CRSS | 12 | pF | |
| Total Gate Charge | QG | 28.3 | nC | VDS=480V,VGS=10V, ID=10A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 13.2 | nC | |
| Gate-Source Charge | QGS | 6.2 | nC | |
| Turn-On Delay Time | tD(ON) | 79.4 | ns | VDS=100V,VGS=10V, ID=10A,RG=25 (NOTE1,2) |
| Turn-On Rise Time | tR | 41.8 | ns | |
| Turn-Off Delay Time | tD(OFF) | 40.9 | ns | |
| Turn-Off Fall Time | tF | 2.1 | ns | |
| Maximum Body-Diode Continuous Current | IS | 10 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 40 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | IS=10A,VGS=0V |
| Reverse Recovery Time | trr | 542 | ns | IS=10A,VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.18 | uC | |
2412111838_Jingdao-Microelectronics-F10N60_C7469041.pdf
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