Power mosfet device Jingdao Microelectronics F7N60L suitable for high speed switching and power supply
Key Attributes
Model Number:
F7N60L
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
RDS(on):
1.2Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
1.08nF@25V
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
F7N60L
Package:
TO-220F-3L
Product Description
Product Overview
The F7N60L is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics
- Origin: Shandong Jingdao Microelectronics Co., LTD
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-Source Breakdown Voltage | VDSS | 600 | V | VGS=0V,ID=250uA |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 7 | A | Tc=25 |
| Continuous Drain Current | ID | 4.5 | A | Tc=100 |
| Pulsed Drain Current | IDM | 28 | A | Note 2 |
| Power Dissipation | PD | 50 | W | Tc=25 |
| Avalanche Energy Single Pulsed | EAS | 490 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| Junction to Ambient Thermal Resistance | RthJA | 62.5 | °C/W | |
| Junction to Case Thermal Resistance | RthJC | 2.5 | °C/W | |
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | ±1 | nA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=600V,VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.2 | Ω | VGS=10V,ID=3.5A |
| Input Capacitance | CISS | 1080 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 90 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 22 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 74 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 20 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 33 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Turn-On Delay Time | tD(ON) | 7 | ns | VDS=300V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 28 | ns | VDS=300V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 506 | ns | VDS=300V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 2.7 | ns | VDS=300V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=7A,VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 50 | ns | IS=7A,VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 6.0 | uC | IS=7A,VGS=0V, di/dt=100A/us (Note 1) |
2209091800_Jingdao-Microelectronics-F7N60L_C5157079.pdf
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