Durable N Channel Power MOSFET Jingdao Microelectronics W25N50 Suitable for Switching Power Supplies
Key Attributes
Model Number:
W25N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
25A
RDS(on):
270mΩ@10V,12.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.4pF
Output Capacitance(Coss):
220pF
Pd - Power Dissipation:
219W
Input Capacitance(Ciss):
2.66nF@25V
Gate Charge(Qg):
30nC@400V
Mfr. Part #:
W25N50
Package:
TO-247-3L
Product Description
Product Overview
The W25N50 is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers superior characteristics including fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideally suited for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Lead Finish: Lead free, RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 500 | V | |
| Continuous Drain Current | ID | 25 | A | Tc=25 |
| Continuous Drain Current | ID | 17.6 | A | Tc=100 |
| Pulsed Drain Current | IDM | 100 | A | Note 2 |
| Gate-Source Voltage | VGSS | 30 | V | |
| Avalanche Energy Single Pulsed | EAS | 219 | mJ | Note 3 |
| Power Dissipation | PD | 780 | W | |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 62.5 | C/W | |
| Junction to Case | RthJC | 0.57 | C/W | |
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 50 | uA | VDS=500V,VGS=0V |
| ON CHARACTERISTICS | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 0.27 | VGS=10V,ID=12.5A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 2660 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 470 | pF | |
| Reverse Transfer Capacitance | CRSS | 10.4 | pF | |
| SWITCHING CHARACTERISTICS | ||||
| Total Gate Charge | QG | 30 | nC | VDS=400V,VGS=10V, ID=25A,RG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 12 | nC | |
| Gate-Source Charge | QGS | 8.0 | nC | |
| Turn-On Delay Time | tD(ON) | 26 | ns | VDS=250V,VGS=10V, ID=25A,RG=25 (NOTE1,2) |
| Turn-On Rise Time | tR | 72 | ns | |
| Turn-Off Delay Time | tD(OFF) | 49 | ns | |
| Turn-Off Fall Time | tF | 40 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 25 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 100 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=25A,VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 470 | ns | IS=25A,VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 5.0 | uC | IS=25A,VGS=0V, di/dt=100A/us (Note 1) |
2308251144_Jingdao-Microelectronics-W25N50_C7528260.pdf
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