N channel VDmosfet transistor 500V 13A continuous current Jingdao Microelectronics F13N50L for power control
Key Attributes
Model Number:
F13N50L
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
RDS(on):
480mΩ@10V,6.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
2.014nF@25V
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
F13N50L
Package:
TO-220F-3L
Product Description
Product Overview
These N-channel enhanced VDmosfets, obtained by self-aligned planar technology, reduce conduction loss, improve switching performance, and enhance avalanche energy. They accord with the RoHS standard.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong Jingdao Microelectronics Co., Ltd.
- Case Material: Green molding compound, UL flammability classification 94V-0, Halogen-free
- Certifications: RoHS compliant
- Lead Finish: Lead free
Technical Specifications
| Parameter | Symbol | Ratings | Units | Test Conditions |
| Absolute Maximum Ratings (Ta=25C, Unless Otherwise Specified) | ||||
| Drain-Source Voltage | VDSS | 500 | V | |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 13 | A | Tc=25C |
| Pulsed Drain Current | IDM | 50.0 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 576 | mJ | Note 3 |
| Power Dissipation | PD | 63 | W | Tc = 25C |
| Operating junction and storage temperature | TJ,TSTG | -55 ~ +150 | C | |
| Thermal Resistance | ||||
| Thermal resistance, junction case | RthJC | 4.0 | C/W | Tc=25C |
| Thermal resistance, junction case | RthJC | 63 | C/W | Tc=100C |
| Thermal resistance, junction ambient(min. footprint) | RthJA | C/W | ||
| Electrical Characteristics (Ta=25C, Unless Otherwise Specified) | ||||
| Off Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | VGS=0V, ID=250uA |
| Gate-Source Leakage Current | IGSS | 100 | nA | VDS=0V, VGS=30V |
| On Characteristics | ||||
| Static Drain-Source On-State Resistance | RDS(ON) | 0.48 | VGS=10V, ID=6.5A | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=500V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250uA |
| Forward Transfer Conductance | gfs | 8.0 | S | VDS=40V, ID=6.5A |
| Dynamic Characteristics | ||||
| Input Capacitance | CISS | 2014 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 160 | pF | |
| Output Capacitance | COSS | 20 | pF | |
| Total Gate Charge | QG | 37 | nC | VDD=400V, VGS=10V, ID=13A, IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 11 | nC | |
| Gate-Drain Charge | QGD | 17 | nC | |
| Switching Characteristics | ||||
| Turn-On Delay Time | tD(ON) | 90 | ns | VDD=250V, VGS=10V, ID=13A, RG=25 (NOTE1,2) |
| Turn-On Rise Time | tR | 160 | ns | |
| Turn-Off Delay Time | tD(OFF) | 150 | ns | |
| Turn-Off Fall Time | tF | 60 | ns | |
| Drain-Source Diode Characteristics And Maximum Ratings | ||||
| Maximum Body-Diode Continuous Current | IS | 13 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=13A, VGS=0V |
| Reverse Recovery Time | trr | 470 | ns | IS=13A, VGS=0V, di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 4.5 | uC | VGS=30V, VDS=0V |
2305040947_Jingdao-Microelectronics-F13N50L_C5632447.pdf
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