N Channel Power MOSFET Jingdao Microelectronics F7N60 with Fast Switching and Low On State Resistance
Key Attributes
Model Number:
F7N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
7A
RDS(on):
910mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
41W
Input Capacitance(Ciss):
1.08nF
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
F7N60
Package:
ITO-220ABW
Product Description
Product Overview
The F7N60 is a high voltage N-CHANNEL POWER MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 7 | A | Tc=25°C |
| Continuous Drain Current | ID | 4.4 | A | Tc=100°C |
| Pulsed Drain Current | IDM | 28 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 490 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | Note 4 |
| Power Dissipation | PD | 41 | W | Tc=25°C |
| Power Dissipation | PD | 16.4 | W | Tc=100°C |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.99 | °C/W | |
| ELECTRICAL CHARACTERISTICS | ||||
| OFF CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS=0V,ID=250µA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=600V,VGS=0V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250µA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.2 | Ω | VGS=10V,ID=3.5A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 1080 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 110 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 12 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 41 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 4.5 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Gate-Source Charge | QGS | 15 | nC | VDS=480V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| SWITCHING CHARACTERISTICS | ||||
| Turn-On Delay Time | tD(ON) | 7 | ns | VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 21 | ns | VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-Off Delay Time | tD(OFF) | 32.7 | ns | VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-Off Fall Time | tF | 31.5 | ns | VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=7A,VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 482 | ns | IS=7A,VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 2.9 | µC | IS=7A,VGS=0V, di/dt=100A/us (Note 1) |
| Peak Diode Recovery dv/dt | 50 | V/ns | Note 4 | |
2412111838_Jingdao-Microelectronics-F7N60_C7469036.pdf
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