N channel Power MOSFET Jingdao Microelectronics F7N70 designed for switching power supply applications
Key Attributes
Model Number:
F7N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
1.4Ω@10V,3.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Output Capacitance(Coss):
27pF
Pd - Power Dissipation:
41W
Input Capacitance(Ciss):
497pF@25V
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
F7N70
Package:
ITO-220ABW
Product Description
Product Overview
The F7N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is typically used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Model: F7N70
- Case: ITO-220ABW
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
- Lead Free Finish: RoHS compliant
- Origin:
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | TA=25C, unless otherwise specified |
| Gate-Source Voltage | VGSS | ±30 | V | TA=25C, unless otherwise specified |
| Continuous Drain Current | ID | 7 | A | Tc=25 |
| Continuous Drain Current | ID | 4.5 | A | Tc=100 |
| Pulsed Drain Current (Note 2) | IDM | 28 | A | TA=25C, unless otherwise specified |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 530 | mJ | L = 30mH, IAS = 5.9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 50 | V/ns | ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C |
| Power Dissipation | PD | 41 | W | Tc=25 |
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.99 | °C/W | |
| Operation Junction Temperature and Storage Temperature | TJ, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V,ID=250μA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V,VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=700V,VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250μA |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.4 | Ω | VGS=10V,ID=3.5A |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.18 | Ω | VGS=10V,ID=7A |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | CISS | 530 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 100 | pF | |
| Reverse Transfer Capacitance | CRSS | 28 | pF | |
| Total Gate Charge (Note 1) | QG | 27 | nC | VDS=560V,VGS=10V, ID=7A,IG=1mA (NOTE1,2) |
| Gate-Drain Charge | QGD | 10 | nC | |
| Gate-Source Charge | QGS | 3.9 | nC | |
| SWITCHING CHARACTERISTICS | ||||
| Turn-On Delay Time (Note 1) | tD(ON) | 10 | ns | VDS=100V,VGS=10V, ID=7A,RG=25Ω (NOTE1,2) |
| Turn-On Rise Time | tR | 18 | ns | |
| Turn-Off Delay Time | tD(OFF) | 317 | ns | |
| Turn-Off Fall Time | tF | 26 | ns | |
| DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS | ||||
| Maximum Body-Diode Continuous Current | IS | 7 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 28 | A | |
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.4 | V | IS=7A,VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 3.5 | μs | IS=7A,VGS=0V, di/dt=100A/μs |
| Reverse Recovery Charge | Qrr | 9.3 | μC | IS=7A,VGS=0V, di/dt=100A/μs |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 50 | V/ns | ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C |
2209091800_Jingdao-Microelectronics-F7N70_C5157087.pdf
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