switching MOSFET Jingdao Microelectronics F4N65L designed for power supply and adaptor applications
Key Attributes
Model Number:
F4N65L
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Output Capacitance(Coss):
63pF
Pd - Power Dissipation:
50W
Input Capacitance(Ciss):
581pF@25V
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
F4N65L
Package:
TO-220F-3L
Product Description
Product Overview
The F4N65L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Color: Not specified
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 650 | V | Ta=25C, Unless Otherwise Specified |
| Gate-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 4.0 | A | Tc=25C |
| Pulsed Drain Current (Note 2) | IDM | 173 | A | |
| Avalanche Energy Single Pulsed (Note 3) | EAS | 50 | mJ | |
| Power Dissipation (Tc = 25C) | PD | 16 | W | |
| Operating junction and storage temperature | TJ,TSTG | -55 ~+150 | C | |
| Thermal Resistance | ||||
| Thermal resistance, junction case | RthJC | 4 | C/W | Tc=25C |
| Thermal resistance, junction case | RthJC | 63 | C/W | Tc=100C |
| Thermal resistance, junction ambient(min. footprint) | RthJA | 50 | C/W | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V,ID=250uA |
| Gate-Source Leakage Current | IGSS | 1.0 | uA | VGS=-30V,VDS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | VGS=10V,ID=2.0A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA |
| Drain-Source Leakage Current | IDSS | 1.0 | uA | VDS=650V,VGS=0V |
| Total Gate Charge (Note 1) | QG | 173 | nC | VDS=480V,VGS=10V, ID=4A (NOTE1,2) |
| Gate-Drain Charge | QGD | 48 | nC | |
| Gate-Source Charge | QGS | 370 | nC | |
| Turn-On Delay Time (Note 1) | tD(ON) | 25 | ns | VDS=325V, RG=2.5 (NOTE1,2) |
| Turn-On Rise Time | tR | 100 | ns | |
| Turn-Off Delay Time | tD(OFF) | 130 | ns | |
| Turn-Off Fall Time | tF | 100 | ns | |
| Drain-Source Diode Forward Voltage (Note 1) | VSD | 1.3 | V | ISD=4A,VGS=0V |
| Reverse Recovery Time (Note 1) | trr | 45 | ns | IF=4A di/dt=100A/us |
| Reverse Recovery Charge | Qrr | 100 | nC | |
| Transconductance | gfs | 2.7 | S | VDS=15V,ID=2A |
| Input Capacitance | CISS | 581 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 63 | pF | |
| Reverse Transfer Capacitance | CRSS | 11 | pF | |
| Gate resistance | RG | 1.9 | ||
| Maximum Body-Diode Continuous Current | IS | 4.0 | A | |
2305040947_Jingdao-Microelectronics-F4N65L_C5632445.pdf
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