Switching diode JSCJ BAS21T designed for electronic circuits needing signal switching and durability
Key Attributes
Model Number:
BAS21T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
250V
Diode Configuration:
-
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21T
Package:
SOT-523-3
Product Description
Product Overview
The BAS21T is a switching diode designed for general-purpose switching applications. It features fast switching speed and high conductance, making it suitable for various electronic circuits requiring efficient signal switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: T3
- Package: SOT-523
Technical Specifications
| Parameter | Symbol | Limit/Test Conditions | Unit |
| Peak Repetitive Peak Reverse Voltage | VRRM | 250 | V |
| Working Peak Reverse Voltage | VRWM | 250 | V |
| DC Blocking Voltage | VR | 250 | V |
| Forward Continuous Current | IFM | 400 | mA |
| Average Rectified Output Current | IO | 200 | mA |
| Forward Surge Current @t=8.3ms Non-Repetitive Peak | IFSM | 2.5 | A |
| Power Dissipation | PD | 150 | mW |
| Thermal Resistance Junction to Ambient | RJA | 833 | /W |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55~+150 | |
| Reverse breakdown voltage | V(BR) | IR= 100A | 250 V |
| Reverse voltage leakage current | IR | VR=200V | 100 nA |
| Forward voltage | VF | IF=100mA | 1 V |
| Forward voltage | VF | IF=200mA | 1.25 V |
| Total capacitance | CT | VR=0V,f=1MHz | 5 pF |
| Reverse recovery time | trr | IF=IR=30mA,Irr=0.1XIR, RL=100 | 50 ns |
2410121720_JSCJ-BAS21T_C68967.pdf
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