JSCJ US2D SMBG Plastic Encapsulated Rectifier Diode Designed for High Surge Current and Performance

Key Attributes
Model Number: US2D(SMBG)
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Reverse Leakage Current (Ir):
5uA
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
1.3V@2.0A
Current - Rectified:
2A
Mfr. Part #:
US2D(SMBG)
Package:
SMBG
Product Description

Product Overview

The US2A through US2M series are high-efficient rectifier diodes in the SMBG package, designed for applications requiring high surge current capability. These diodes offer a voltage range from 50V to 1000V and are suitable for general-purpose rectification.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Marking: X: From A To M
  • Polarity: Color band denotes cathode
  • Material: Plastic-Encapsulated Diodes
  • Origin: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Technical Specifications

ItemSymbolUnitTest ConditionsUS2AUS2BUS2DUS2GUS2JUS2KUS2M
Repetitive Peak Reverse VoltageVRRMV507550100200400600
Average Forward CurrentIF(AV)A2.02.02.02.02.02.02.0
Surge(Non-repetitive)Forward CurrentIFSMA60Hz Half-sine wave, 1 cycle, Ta=2570100140280420560700
Maximum RMS VoltageVRMSV35503570140280420
Peak Forward VoltageVFVIF =2.0A1.31.31.31.31.31.31.3
Peak Reverse CurrentIRRM1AVRM=VRRM, Ta =2568686868686868
Peak Reverse CurrentIRRM2AVRM=VRRM, Ta =12560606060606060
Maximum reverse recovery timetrrnsIF=0.5A,IR=1.0A,Irr=0.25A5555555
Junction CapacitanceCjpFMeasured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C26262626262626
Thermal Resistance(Typical)RJ-A/ WBetween junction and ambient75757575757575
Thermal Resistance(Typical)RJ-L/ WBetween junction and terminal1.01.01.01.01.01.01.0

2410122022_JSCJ-US2D-SMBG_C5356788.pdf

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