Fast switching N channel MOSFET Jingdao Microelectronics D4N70 with low on state resistance and high voltage rating
Key Attributes
Model Number:
D4N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
4A
RDS(on):
2.8Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
54W
Input Capacitance(Ciss):
560pF@25V
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
D4N70
Package:
TO-252W
Product Description
Product Overview
The D4N70 is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics, making it suitable for use in switching power supplies and adaptors.
Product Attributes
- Brand: Jingdao Microelectronics co.LTD
- Origin: Shandong, China
- Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free".
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDSS | 700 | V | Tj=25C |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 4 | A | Tc=25C |
| Continuous Drain Current | ID | 2.5 | A | Tc=100C |
| Pulsed Drain Current | IDM | 16 | A | Note 2 |
| Avalanche Energy Single Pulsed | EAS | 242 | mJ | Note 3 |
| Peak Diode Recovery dv/dt | dv/dt | 2.1 | V/ns | Note 4 |
| Power Dissipation | PD | 54 | W | Tj=25C |
| Operation Junction and Storage Temperature | Tj, stg | -55 ~ +150 | °C | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=250uA |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=700V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS, ID=250uA |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.8 | Ω | VGS=10V, ID=2.0A |
| Input Capacitance | CISS | 100 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | COSS | 12 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | CRSS | 4.0 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Total Gate Charge | QG | 16 | nC | VDS=560V, VGS=10V, ID=4A, IG=1mA (Note 1,2) |
| Gate-Drain Charge | QGD | 7 | nC | VDS=560V, VGS=10V, ID=4A, IG=1mA (Note 1,2) |
| Gate-Source Charge | QGS | 36 | nC | VDS=560V, VGS=10V, ID=4A, IG=1mA (Note 1,2) |
| Turn-On Delay Time | tD(ON) | 13 | ns | VDS=350V, VGS=10V, ID=4A, RG=25Ω (Note 1,2) |
| Turn-On Rise Time | tR | 22 | ns | VDS=350V, VGS=10V, ID=4A, RG=25Ω (Note 1,2) |
| Turn-Off Delay Time | tD(OFF) | 16 | ns | VDS=350V, VGS=10V, ID=4A, RG=25Ω (Note 1,2) |
| Turn-Off Fall Time | tF | 4.5 | ns | VDS=350V, VGS=10V, ID=4A, RG=25Ω (Note 1,2) |
| Maximum Body-Diode Continuous Current | IS | 4 | A | |
| Maximum Body-Diode Pulsed Current | ISM | 16 | A | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=4A, VGS=0V (Note 1) |
| Reverse Recovery Time | trr | 250 | ns | IS=4A, VGS=0V, di/dt=100A/us (Note 1) |
| Reverse Recovery Charge | Qrr | 4.0 | uC | IS=4A, VGS=0V, di/dt=100A/us (Note 1) |
| THERMAL DATA | ||||
| Junction to Ambient | RthJA | 63 | °C/W | |
| Junction to Case | RthJC | 2.31 | °C/W | |
2209091800_Jingdao-Microelectronics-D4N70_C5157063.pdf
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