100V N Channel MOSFET with Low RDS ON High Speed Switching and High Current Capacity JingYang JY10220X
Key Attributes
Model Number:
JY10220X
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+125℃
RDS(on):
90mΩ@10V
Reverse Transfer Capacitance (Crss@Vds):
40pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
660pF@50V
Pd - Power Dissipation:
1.6W
Mfr. Part #:
JY10220X
Package:
SOT-23-6L
Product Description
Product Overview
The JY10220X is a 100V N-Channel MOSFET featuring high performance trench technology for extremely low RDS(ON). It offers high power and current handling capability, fast switching speed, and low gate charge, making it suitable for DC/DC converter applications.
Product Attributes
- Brand: JY Electronics
- Package: SOT23-6L
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Voltage (VDSS) | 100 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Drain Current - Continuous (ID) | TA=25oC | 2.6 | A | ||
| Drain Current - Pulsed (ID) | 20 | A | |||
| Maximum Power Dissipation (PD) | TA=25oC (Note 1a) | 1.6 | W | ||
| Maximum Power Dissipation (PD) | TA=25oC (Note 1b) | 0.8 | W | ||
| Operating and Storage Junction Temperature Range (TJ, TSTG) | 55 | +125 | C | ||
| Thermal Resistance, Junction-to-Ambient (RJA) | Note 1a | 78 | C/W | ||
| Thermal Resistance, Junction-to-Case (RJC) | Note 1 | 30 | C/W | ||
| Drain-Source Avalanche Energy (WDSS) | Single Pulse, VDD = 50 V, ID=2.6 A | 90 | mJ | ||
| Drain-Source Avalanche Current (IAR) | 2.6 | A | |||
| DrainSource Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 250 A | 100 | V | ||
| Breakdown Voltage Temperature Coefficient (BVDSS/TJ) | ID = 250 A, Referenced to 25C | 99 | mV/C | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 80 V, VGS = 0 V | 10 | A | ||
| GateBody Leakage, Forward (IGSSF) | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| GateBody Leakage, Reverse (IGSSR) | VGS = 20 V, VDS = 0 V | 100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250 A | 1 | 2.3 | 3 | V |
| Gate Threshold Voltage Temperature Coefficient (VGS(th)/TJ) | ID = 250 A, Referenced to 25C | 6 | mV/C | ||
| Static DrainSource On Resistance (RDS(on)) | Vgs = 10 V, Id = 1 A | 85 | 90 | 110 | m |
| Static DrainSource On Resistance (RDS(on)) | Vgs = 4.5 V, Id = 1 A | 85 | m | ||
| Static DrainSource On Resistance (RDS(on)) | Vgs = 10 V, Id = 2.6 A | 90 | m | ||
| OnState Drain Current (ID(on)) | VGS = 10 V, VDS = 5 V | 10 | A | ||
| Forward Transconductance (gFS) | VDS = 10 V, ID = 2.6 A | 10 | S | ||
| Input Capacitance (Ciss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | 660 | pF | ||
| Output Capacitance (Coss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | 55 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS = 50 V, V GS = 0 V, f = 1.0 MHz | 40 | pF | ||
| TurnOn Delay Time (td(on)) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | 6 | 11 | ns | |
| TurnOn Rise Time (tr) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | 3.5 | 7 | ns | |
| TurnOff Delay Time (td(off)) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | 23 | 37 | ns | |
| TurnOff Fall Time (tf) | VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 | 3.7 | 7.4 | ns | |
| Total Gate Charge (Qg) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | 14 | 20 | nC | |
| GateSource Charge (Qgs) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | 2.3 | nC | ||
| GateDrain Charge (Qgd) | VDS = 50 V, ID = 2.6 A, VGS = 10 V | 3.6 | nC | ||
| Maximum Continuous DrainSource Diode Forward Current (IS) | 1.3 | A | |||
| DrainSource Diode Forward Voltage (VSD) | VGS = 0 V, IS = 1.3 A (Note 2) | 0.76 | 1.2 | V | |
| Diode Reverse Recovery Time (trr) | IF = 2.6 A diF/dt = 100 A/s (Note 2) | 31 | nS | ||
| Diode Reverse Recovery Charge (Qrr) | IF = 2.6 A diF/dt = 100 A/s (Note 2) | 56 | nC |
2405091034_JingYang-JY10220X_C5380419.pdf
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