Low On State Resistance N Channel Enhancement Mode Power MOSFET JingYang TNM3K50WX for Driver Applications
Key Attributes
Model Number:
TNM3K50WX
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V,0.2A
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Output Capacitance(Coss):
15pF
Input Capacitance(Ciss):
30pF@25V
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
2.4nC@10V
Mfr. Part #:
TNM3K50WX
Package:
SOT-323
Product Description
Product Overview
This N-Channel Enhancement Mode Power MOSFET is designed for high power and current handling capabilities. It features a low on-state resistance and direct logic-level interface for TTL/CMOS compatibility. Suitable for various driver applications, battery-operated systems, and solid-state relays, this lead-free product comes in a surface mount package.
Product Attributes
- Brand: JY Electronics (implied from website)
- Origin: China (implied from website)
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | 50 | V | |||
| Continuous Drain Current | ID | 0.3 | A | |||
| RDS(ON) | VGS=4.5V | 3.5 | ||||
| RDS(ON) | VGS=10V | 2.5 | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | 50 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Continuous Drain Current | ID | TA=25 | 0.3 | A | ||
| Pulsed Drain Current | IDM | Note 1 | 1.2 | A | ||
| Maximum Power Dissipation | PD | @25 | 0.2 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 50 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | 110 | 500 | nA |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | 0.3 | 10 | uA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.6 | 1.0 | - | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=0.2A | - | 1.4 | 3.5 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.2A | - | 1.0 | 2.5 | |
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.2 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 30 | - | PF | |
| Output Capacitance | Coss | - | 15 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | - | 6 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | - | - | 5 | nS | |
| Turn-on Rise Time | tr | - | - | 5 | nS | |
| Turn-Off Delay Time | td(off) | - | - | 60 | nS | |
| Turn-Off Fall Time | tf | VDD=30V,ID=0.22A, VGS=10V,RGEN=6 | - | - | 35 | nS |
| Total Gate Charge | Qg | VDS=25V,ID=0.2A, VGS=10V | - | - | 2.4 | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=0.22A | - | - | 1.4 | V |
| Diode Forward Current | IS | - | - | 0.22 | A | |
2405091033_JingYang-TNM3K50WX_C5364045.pdf
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