Low RDSon N Channel MOSFET JingYang JY3400X Suitable for DC DC Converters and Battery Powered Devices
Key Attributes
Model Number:
JY3400X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
41mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
99pF
Input Capacitance(Ciss):
1.03nF@15V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
9.7nC@4.5V
Mfr. Part #:
JY3400X
Package:
SOT-23
Product Description
Product Overview
These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Product Attributes
- Brand: JY Electronics (inferred from website)
- Origin: China (inferred from website)
- Package Type: SOT23
- Marking: 3400
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| N-Channel 30-V (D-S) MOSFET Maximum Ratings | TA = 25 oC UNLESS OTHERWISE NOTED | |||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25oC | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70oC | 4.9 | A | ||
| Pulsed Drain Current | IDM | b | 30 | A | ||
| Continuous Source Current (Body Diode) | IS | a | 2.5 | A | ||
| Power Dissipation | PD | TA=25oC | 350 | mW | ||
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | OC | ||
| Maximum Junction-to-Ambient | RJA | a | 357 | oC/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.7 | 1.4 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS =12V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS = 24 V, VGS = 0 V TJ = 25oC | 1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS = 24 V, VGS = 0 V, TJ = 55oC | 5 | uA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 5.8 A | 41 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5 V, ID = 5.0 A | 45 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 2.5 V, ID = 4.0A | 59 | m | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 5A | 15 | S | ||
| Diode Forward On Voltage | VSD | IS = 1.0 A, VGS = 0 V | 1.0 | V | ||
| Reverse Recovery Time | Trr | IS =5A,VGS=0V, di/dt=100A/uS | 16 | nS | ||
| Reverse Recovery Charge | Qrr | 8.9 | nC | |||
| Total Gate Charge | Qg | VDS = 15V, VGS = 4.5V ID = 5.8A | 9.7 | 12 | nC | |
| Gate-Source Charge | Qgs | 1.6 | nC | |||
| Gate-Drain Charge | Qg d | 3.1 | nC | |||
| Turn-On Delay Time | td(on) | VDS=15V, RL=2.7,RG = 3, VGS = 10V | 3.3 | nS | ||
| Turn-On Rise Time | tr | 4.8 | nS | |||
| Turn-Off Delay Time | td(off) | 26.3 | nS | |||
| Turn-Off Fall Time | tf | 4.1 | nS | |||
| Input Capacitance | Ciss | VGS=0V,VDS=-15V,f =1.0MHz | 823 | 1030 | pF | |
| Output Capacitance | Coss | 99 | pF | |||
| Reverse Transfer Capacitance | Crss | 77 | pF | |||
| Gate Resistance | Rg | f =1.0MHz | 1.2 | 3.6 |
2405091034_JingYang-JY3400X_C5380423.pdf
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