Low Voltage Schottky Diode JSCJ B5818W SOD123 Package for Inverter and Polarity Protection Circuits
Product Overview
This series of Schottky Barrier Diodes, from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, are designed for low voltage, high frequency applications. They are ideal for use in inverters, free-wheeling circuits, and polarity protection, offering efficient performance in demanding electronic systems.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOD-123
- Material: Plastic-Encapsulate
- Marking: B5817W: SJ, B5818W: SK, B5819W: SL
- Origin: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | B5817W | B5818W | B5819W | Unit |
| Non-Repetitive Peak Reverse Voltage | VRM | 20 | 30 | 40 | V |
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage | VRRM / VRWM / VR | 20 | 30 | 40 | V |
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current | IO | 1 | 1 | 1 | A |
| Peak Forward Surge Current @t=8.3ms | IFSM | 9 | 9 | 9 | A |
| Repetitive Peak Forward Current | IFRM | 1.5 | 1.5 | 1.5 | A |
| Power Dissipation | Pd | 500 | 500 | 500 | mW |
| Thermal Resistance Junction to Ambient | RJA | 200 | 200 | 200 | /W |
| Reverse breakdown voltage (IR= 1mA) | V(BR) | 20 | 30 | 40 | V |
| Reverse voltage leakage current (VR=20V B5817W, VR=30V B5818W, VR=40V B5819W) | IR | 1 | 1 | 1 | mA |
| Forward voltage (VF) | IF=1A | 0.45 | 0.55 | 0.6 | V |
| IF=3A | 0.75 | 0.875 | 0.9 | ||
| Diode capacitance (VR=4V, f=1MHz) | CD | 120 | 120 | 120 | pF |
| Storage Temperature | TSTG | -55~+150 | |||
| Junction temperature | TJ | 125 | |||
2410121628_JSCJ-B5818W-_C21571.pdf
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