Low Voltage Schottky Diode JSCJ B5818W SOD123 Package for Inverter and Polarity Protection Circuits

Key Attributes
Model Number: B5818W
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@30V
Non-Repetitive Peak Forward Surge Current:
9A
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5818W
Package:
SOD-123
Product Description

Product Overview

This series of Schottky Barrier Diodes, from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, are designed for low voltage, high frequency applications. They are ideal for use in inverters, free-wheeling circuits, and polarity protection, offering efficient performance in demanding electronic systems.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: SOD-123
  • Material: Plastic-Encapsulate
  • Marking: B5817W: SJ, B5818W: SK, B5819W: SL
  • Origin: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolB5817WB5818WB5819WUnit
Non-Repetitive Peak Reverse VoltageVRM203040V
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR203040V
RMS Reverse VoltageVR(RMS)142128V
Average Rectified Output CurrentIO111A
Peak Forward Surge Current @t=8.3msIFSM999A
Repetitive Peak Forward CurrentIFRM1.51.51.5A
Power DissipationPd500500500mW
Thermal Resistance Junction to AmbientRJA200200200/W
Reverse breakdown voltage (IR= 1mA)V(BR)203040V
Reverse voltage leakage current (VR=20V B5817W, VR=30V B5818W, VR=40V B5819W)IR111mA
Forward voltage (VF)IF=1A0.450.550.6V
IF=3A0.750.8750.9
Diode capacitance (VR=4V, f=1MHz)CD120120120pF
Storage TemperatureTSTG-55~+150
Junction temperatureTJ125

2410121628_JSCJ-B5818W-_C21571.pdf

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