dual digital transistor JSCJ UMH3N with two independent NPN transistor elements and built in resistors
Key Attributes
Model Number:
UMH3N
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
6.11kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMH3N
Package:
SOT-363
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD UMH3N is a dual digital transistor package containing two independent DTC143T NPN transistor elements. This configuration eliminates interference between elements, significantly reducing mounting cost and area by half. It is designed for applications requiring integrated digital transistor functionality with built-in resistors.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package Type: SOT-363
- Marking: H3
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Collector-base voltage | V(BR)CBO | 50 | V | |
| Collector-emitter voltage | V(BR)CEO | 50 | V | |
| Emitter-base voltage | V(BR)EBO | 5 | V | |
| Collector current | IC | 100 | mA | |
| Collector Power dissipation | PC | 150 | mW | Ta=25 |
| Junction temperature | Tj | 150 | ||
| Storage temperature | Tstg | -55~150 | ||
| Collector-base breakdown voltage | V(BR)CBO | 50 | V | Ic=50A |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | Ic=1mA |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=50A |
| Collector cut-off current | ICBO | 0.5 | A | VCB=50V |
| Emitter cut-off current | IEBO | 0.5 | A | VEB=4V |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=5mA,IB=0.25mA |
| DC current transfer ratio | hFE | 100-600 | VCE=5V,IC=1mA | |
| Input resistance | R1 | 3.29-6.11 | K | |
| Transition frequency | fT | 250 | MHz | VCE=10V ,IE=-5mA,f=100MHz |
2410121642_JSCJ-UMH3N_C62892.pdf
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