High speed switching diode JSCJ BAV70T with 85 volt reverse voltage and 75 milliamp forward current
Key Attributes
Model Number:
BAV70T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
85V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
75mA
Mfr. Part #:
BAV70T
Package:
SOT-523
Product Description
Product Overview
The BAW56T/BAV70T/BAV99T are high-performance switching diodes designed for general-purpose switching applications. They offer fast switching speeds and high conductance, making them suitable for various electronic circuits. These diodes are available in the compact SOT-523 package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-523
Technical Specifications
| Part Number | Marking | Reverse Voltage (VR) | Forward Current (IF) | Power Dissipation (PD) | Reverse Breakdown Voltage (V(BR)) | Reverse Voltage Leakage Current (IR) | Forward Voltage (VF) | Diode Capacitance (CD) | Reverse Recovery Time (trr) |
| BAW56T | JD | 85 V | 75 mA | 150 mW | 85 V @ IR=1A | 2 A @ VR=75V, 0.03 A @ VR=25V | 715 mV @ IF=1mA, 855 mV @ IF=10mA, 1000 mV @ IF=50mA, 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
| BAV70T | JE | 85 V | 75 mA | 150 mW | 85 V @ IR=1A | 2 A @ VR=75V, 0.03 A @ VR=25V | 715 mV @ IF=1mA, 855 mV @ IF=10mA, 1000 mV @ IF=50mA, 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
| BAV99T | JJ | 85 V | 75 mA | 150 mW | 85 V @ IR=1A | 2 A @ VR=75V, 0.03 A @ VR=25V | 715 mV @ IF=1mA, 855 mV @ IF=10mA, 1000 mV @ IF=50mA, 1250 mV @ IF=150mA | 1.5 pF @ VR=0, f=1MHz | 4 ns @ IF=IR=10mA, Irr=0.1IR, RL=100 |
2410121913_JSCJ-BAV70T_C2992008.pdf
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