Small plastic package high speed switching diode JSCJ BAS316 with 85V peak reverse voltage rating
Key Attributes
Model Number:
BAS316
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS316
Package:
SOD-323
Product Description
Product Overview
The BAS316 is a high-speed switching diode in a very small plastic package, ideal for high-speed switching applications in surface-mounted circuits. It offers excellent performance with a peak repetitive reverse voltage of 85V and a continuous forward current of 250mA.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Package: SOD-323 Plastic Package
- Marking: A6
- Device Color: Green molding compound
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |||
| DC Blocking Voltage | VR | 75 | V | |||
| Continuous Forward Current | IO | 250 | mA | |||
| Power Dissipation | PD | 250 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 500 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Non-repetitive Peak Forward Surge Current | IFSM | t=8.3ms | 2.0 | A | ||
| Reverse Voltage Breakdown | V(BR) | IR=100A | 100 | V | ||
| Reverse Current | IR | VR=25V | 30 | nA | ||
| Reverse Current | IR | VR=75V | 1 | A | ||
| Forward Voltage | VF | IF=1mA | 0.715 | V | ||
| Forward Voltage | VF | IF=10mA | 0.855 | V | ||
| Forward Voltage | VF | IF=50mA | 1 | V | ||
| Forward Voltage | VF | IF=150mA | 1.25 | V | ||
| Total Capacitance | Ctot | VR=0V,f=1MHz | 1.5 | pF | ||
| Reverse Recovery Time | trr | IF=10mA, IR=10mA, Irr=0.1IR | 4 | ns |
2409300133_JSCJ-BAS316_C8488.pdf
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