Schottky barrier diode JSCJ SD103CWS featuring low reverse capacitance and transient protection

Key Attributes
Model Number: SD103CWS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@10V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
20V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
600mV@200mA
Current - Rectified:
350mA
Mfr. Part #:
SD103CWS
Package:
SOD-323
Product Description

Product Overview

The SOD-323 SD103AWS-SD103CWS series are Schottky Barrier Diodes designed for applications requiring low forward voltage drop, negligible reverse recovery time, and low reverse capacitance. They feature guard ring construction for transient protection, making them suitable for various electronic circuits.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Origin: China
  • Package Type: SOD-323
  • Molding Compound: Green (if solid dot present)

Technical Specifications

ParameterSymbolSD103AWSSD103BWSSD103CWSUnitConditions
Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking VoltageVRRM / VRWM / VR403020V
RMS Reverse VoltageVR(RMS)282114V
Forward Continuous CurrentIFM350mA@Ta=25
Non-repetitive Peak Forward Surge CurrentIFSM2.0A@t=8.3ms
Power DissipationPd200mW@Ta=25
Thermal Resistance Junction to AmbientRJA500/W
Storage TemperatureTSTG-55~+150
Junction TemperatureTj-40~+125
Reverse breakdown voltageV(BR)403020VIR=100A
Forward voltageVF0.37VIF=20mA
Forward voltageVF0.60VIF=200mA
Reverse currentIRM5.0AVR=30V
Reverse currentIRM5.0AVR=10V
Capacitance between terminalsCT50pFVR=0V,f=1.0MHz
Reverse recovery timetrr10nsIF=IR=200mA, Irr=0.1XIR,RL=100

2410121610_JSCJ-SD103CWS_C77358.pdf

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