Power Rectifier JSCJ SBDD15H150A Featuring Guard Ring Die Construction and 15 Ampere Average Current
Key Attributes
Model Number:
SBDD15H150A
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
250A
Reverse Leakage Current (Ir):
500nA@150V
Voltage - DC Reverse (Vr) (Max):
150V
Voltage - Forward(Vf@If):
900mV@15A
Current - Rectified:
15A
Mfr. Part #:
SBDD15H150A
Package:
TO-252-2L
Product Description
Product Overview
The SBDD15H150A is a Schottky Barrier Rectifier designed for high efficiency and low power loss. It features high current capability and a low forward voltage drop, making it suitable for various power rectification applications. The device utilizes guard ring die construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBDD15H150A
- Package: TO-252-2L Plastic-Encapsulate Diode
- Marking: SBDD15H150A= Device code, Solid dot = Green molding compound device if none, the normal device, XXXX= Code
- Website: www.jscj-elec.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak repetitive reverse voltage | VRRM | 150 | V | |||
| Working peak reverse voltage | VRWM | V | ||||
| DC blocking voltage | VR | 150 | V | |||
| RMS reverse voltage | VR(RMS) | 105 | V | |||
| Average rectified output current | IO | 15 | A | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 250 | A | |||
| Reverse voltage | V(BR) | IR=1mA | 150 | V | ||
| Reverse current | IR | VR=150V | 100 | uA | ||
| Forward voltage | VF | IF=3A | 0.68 | 0.81 | V | |
| Forward voltage | VF | IF=15A | 0.81 | 0.90 | V | |
| Thermal resistance from junction to ambient | RJA | 500 | /W | |||
| Thermal resistance from junction to case | RJC | 1.0 | /W | |||
| Junction temperature | Tj | -55 | 175 | |||
| Storage temperature | Tstg | -55 | 175 |
2410121743_JSCJ-SBDD15H150A_C5295522.pdf
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