Plastic Encapsulated Schottky Barrier Diode JSCJ B5819WS SOD 323 Package for Low Voltage Applications
Key Attributes
Model Number:
B5819WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1.5A
Reverse Leakage Current (Ir):
1.5A
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5819WS
Package:
SOD-323
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS are Schottky Barrier Diodes designed for low voltage, high frequency inverters, free wheeling, and polarity protection applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOD-323
- Encapsulation: Plastic
- Marking: B5817WS:SJ, B5818WS:SK, B5819WS:SL
- Molding Compound: Green (indicated by solid dot), Normal (if no solid dot)
Technical Specifications
| Parameter | Symbol | B5817WS | B5818WS | B5819WS | Unit |
| Maximum Ratings and Electrical Characteristics (Single Diode @Ta=25) | |||||
| Non-repetitive peak reverse voltage | VRM | 20 | 30 | 40 | V |
| Peak repetitive peak reverse voltage | VRRM VRWM VR | 20 | 30 | 40 | V |
| Working peak reverse voltage | |||||
| DC blocking voltage | VR | 20 | 30 | 40 | V |
| RMS reverse voltage | VR(RMS) | 14 | 21 | 28 | V |
| Average rectified output current | IO | 1 | 1 | 1 | A |
| Repetitive peak forward current | IFRM | 1.5 | 1.5 | 1.5 | A |
| Power dissipation | Pd | 250 | 250 | 250 | mW |
| Thermal resistance junction to ambient | RJA | 400 | 400 | 400 | /W |
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | |||||
| Reverse breakdown voltage | V(BR) (IR= 1mA) | 20 | 30 | 40 | V |
| Reverse voltage leakage current | IR | 1 mA (VR=20V) | 1 mA (VR=30V) | 1 mA (VR=40V) | mA |
| B5817WS | B5818WS | B5819WS | |||
| 1 | 1 | 1 | |||
| Forward voltage | VF | 0.45 V (IF=1A) | 0.55 V (IF=1A) | 0.6 V (IF=1A) | V |
| 0.75 V (IF=3A) | 0.875 V (IF=3A) | 0.9 V (IF=3A) | |||
| B5817WS | B5818WS | B5819WS | |||
| Diode capacitance | CD (VR=4V, f=1MHz) | 120 | 120 | 120 | pF |
| Storage temperature | TSTG | -55~+150 | -55~+150 | -55~+150 | |
| Junction temperature | TJ | 125 | 125 | 125 | |
| Non-repetitive Peak Forward Surge Current | IFSM (@t=8.3ms) | 9 | 9 | 9 | A |
2410121246_JSCJ-B5819WS_C22624.pdf
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