High Frequency Inverter Protection Schottky Diode JSCJ B5817W SOD123 Plastic Encapsulation Low Voltage Design
Key Attributes
Model Number:
B5817W
Product Custom Attributes
Reverse Leakage Current (Ir):
1mA@20V
Non-Repetitive Peak Forward Surge Current:
9A
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
450mV@1A
Current - Rectified:
1A
Mfr. Part #:
B5817W
Package:
SOD-123
Product Description
Product Overview
The B5817W-5819W series are Schottky Barrier Diodes in SOD-123 plastic encapsulation, designed for low voltage, high frequency inverters, freewheeling, and polarity protection applications. They offer efficient performance in these demanding scenarios.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: CHINA
- Package: SOD-123
- Encapsulation: Plastic
Technical Specifications
| Model | Non-Repetitive Peak Reverse Voltage (VRM) | Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage / DC Blocking Voltage (VRRM/VRWM/VR) | RMS Reverse Voltage (VR(RMS)) | Average Rectified Output Current (IO) | Peak Forward Surge Current (IFSM) @t=8.3ms | Repetitive Peak Forward Current (IFRM) | Power Dissipation (PD) | Thermal Resistance Junction to Ambient (RJA) | Storage Temperature (TSTG) | Junction Temperature (TJ) | Reverse breakdown voltage (V(BR)) @IR=1mA | Reverse voltage leakage current (IR) | Forward voltage (VF) | Diode capacitance (CD) @VR=4V, f=1MHz | Marking |
| B5817W | 20 V | 20 V | 14 V | 1 A | 9 A | 1.5 A | 500 mW | 200 /W | -55~+150 | 125 | 20 V | @VR=20V: 0.1 mA | @IF=1A: 0.45 V, @IF=3A: 0.75 V | 120 pF | SJ |
| B5818W | 30 V | 30 V | 21 V | 1 A | 9 A | 1.5 A | 500 mW | 200 /W | -55~+150 | 125 | 30 V | @VR=30V: 1 mA | @IF=1A: 0.55 V, @IF=3A: 0.875 V | 120 pF | SK |
| B5819W | 40 V | 40 V | 28 V | 1 A | 9 A | 1.5 A | 500 mW | 200 /W | -55~+150 | 125 | 40 V | @VR=40V: 10 mA | @IF=1A: 0.6 V, @IF=3A: 0.9 V | 120 pF | SL |
1811011112_JSCJ-B5817W_C8597.pdf
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