Schottky Barrier Diode JSCJ BAT42W with Plastic Encapsulation and 500 Milliamp Peak Forward Current
Key Attributes
Model Number:
BAT42W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
500nA@25V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
650mV@50mA
Current - Rectified:
200mA
Mfr. Part #:
BAT42W
Package:
SOD-123
Product Description
Product Overview
The BAT42W/BAT43W is a Schottky barrier diode designed for surface mount applications, ideally suited for automatic insertion. It features a low forward voltage drop and fast switching time, making it suitable for various electronic circuits requiring efficient rectification and switching.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123 Plastic-Encapsulate Diodes
- Marking: BAT42W, BAT43W
- Molding Compound: Green (indicated by solid dot), Normal (if no dot)
Technical Specifications
| Parameter | Symbol | BAT42W/BAT43W | Unit | Conditions | |
| Peak Repetitive Peak Reverse Voltage | VRRM | 30 | V | ||
| Working Peak Reverse Voltage | VRWM | 30 | V | ||
| DC Blocking Voltage | VR | 30 | V | ||
| RMS Reverse Voltage | VR(RMS) | 21 | V | ||
| Forward Continuous Current | IFM | 200 | mA | @Ta=25 | |
| Repetitive Peak Forward Current | IFRM | 500 | mA | @t<1.0s | |
| Power Dissipation | PD | 500 | mW | @Ta=25 | |
| Thermal Resistance Junction to Ambient | RJA | 200 | /W | ||
| Reverse breakdown voltage | V (BR) | 30 | V | IR=10A | |
| Forward voltage | VF | 1.0 | V | IF=200mA (All Types) | |
| Forward voltage | VF | 0.4 | V | IF=10mA (BAT42W) | |
| Forward voltage | VF | 0.65 | V | IF=50mA (BAT42W) | |
| Forward voltage | VF | 0.26 | 0.33 | V | IF=2mA (BAT43W) |
| Forward voltage | VF | 0.45 | V | IF=15mA (BAT43W) | |
| Reverse current | IR | 0.5 | A | VR=25V | |
| Capacitance between terminals | CT | 10 | pF | VR=1.0V,f=1.0MHz | |
| Reverse recovery time | trr | 5 | ns | IF=IR=10mA, Irr=0.1XIR,RL=100 | |
| Storage Temperature Range | TSTG | -55 ~ +150 | |||
| Operating Junction Temperature Range | TJ | -40 ~ +125 | |||
| Non-repetitive Peak Forward Surge Current | IFSM | 4.0 | A | @t=8.3ms |
2410121931_JSCJ-BAT42W_C2991962.pdf
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