Compact DFN WB0.6x0.3-2L Package Schottky Diode JSCJ DS521-30EAA02 for Electronic Applications
Key Attributes
Model Number:
DS521-30EAA02
Product Custom Attributes
Reverse Leakage Current (Ir):
9uA@30V
Non-Repetitive Peak Forward Surge Current:
500mA
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
600mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
DS521-30EAA02
Package:
DFNWB0.6x0.3-2
Product Description
Product Overview
The DFN WB0.6x0.3-2L DS521-30EAA02 is a Schottky barrier diode in a small surface mounting type package. It offers low reverse current and low forward voltage, making it highly reliable for high-speed switching applications in portable equipment such as mobile phones, MP3 players, MDs, CD-ROMs, DVD-ROMs, and notebook PCs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Type: Schottky Barrier Diode
- Package: DFN WB0.6x0.3-2L
- Material: Plastic-Encapsulate Diodes
Technical Specifications
| Symbol | Parameter | Limit | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 30 | V | ||||
| VRWM | Working Peak Reverse Voltage | 30 | V | ||||
| VR(RMS) | RMS Reverse Voltage | 21 | V | ||||
| IO | Average Rectified Output Current | 100 | mA | (Ta=25) | |||
| IFSM | Non-Repetitive Peak Forward Surge Current | 0.5 | A | @ t=8.3ms | |||
| Pd | Power Dissipation | 100 | mW | (Ta=25) | |||
| RJA | Thermal Resistance from Junction to Ambient | 1000 | /W | ||||
| TJ | Operating Junction Temperature Range | -40 | +125 | ||||
| Tstg | Storage Temperature Range | -55 | +150 | ||||
| V(BR) | Reverse breakdown voltage | 30 | V | IR=50A | |||
| IR | Reverse current | A | VR=10V | 2 | |||
| IR | Reverse current | A | VR=30V | ||||
| VF | Forward voltage | V | IF=10mA | 0.38 | |||
| VF | Forward voltage | V | IF=100mA | 0.60 | |||
| CT | Capacitance between terminals | pF | VR=30V, f=1MHz |
2512101448_JSCJ-DS521-30EAA02_C2910039.pdf
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