Power Diode JSCJ MURD10H60 Optimized for High Speed Switching in EV Battery Charging Applications
Key Attributes
Model Number:
MURD10H60
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@600V
Non-Repetitive Peak Forward Surge Current:
144A
Reverse Recovery Time (trr):
24ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Pd - Power Dissipation:
100W
Voltage - Forward(Vf@If):
1.6V@10A
Current - Rectified:
10A
Mfr. Part #:
MURD10H60
Package:
TO-252-2L
Product Description
Product Overview
The MURD10H60 is a HYPERFAST RECTIFIER, FRED designed for high-efficiency applications. It features ultrafast recovery times, low recovery loss, low forward voltage, and low reverse leakage current. This device is specifically engineered to enhance the performance of PFC and output rectification stages in EV/HEV battery charging stations, booster stages of solar inverters, and UPS applications. It is ideally suited for operation with MOSFETs or high-speed IGBTs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: MURD10H60
- Package Type: TO-252-2L Plastic-Encapsulate Diode
- Marking: MURD10H60 (Device code), Solid dot (Green molding compound device if present)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | ||||||
| VRRM | Peak Repetitive Reverse Voltage | 600 | V | |||
| VR | DC Blocking Voltage | 600 | V | |||
| IF(AV) | Average Forward Current | (TC=150) | 10 | A | ||
| IF(RMS) | RMS Forward Current | (TC=150) | 14 | A | ||
| IFSM | Non-Repetitive Surge Forward Current | (8.3ms | 144 | A | ||
| PD | Power dissipation | 100 | W | |||
| RJC | Thermal Resistance From Junction to Case | 1.5 | /W | |||
| Tj | Operating Junction Temperature Range | -55 | +175 | |||
| Tstg | Storage Temperature Range | -55 | +175 | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| V(BR) | Reverse Voltage | IR=100A | 600 | V | ||
| IR | Reverse Current | VR=600V, Tj=25 | 10 | A | ||
| IR | Reverse Current | VR=600V, Tj=150 | 500 | A | ||
| VF | Forward Voltage | IF=10A, Tj=25 | 1.25 | 1.6 | V | |
| VF | Forward Voltage | IF=10A, Tj=150 | 1.02 | V | ||
| Ctot | Total Capacitance | VR=200V, f=1MHz | 12 | pF | ||
| trr | Reverse Recovery time | IF=0.5A, IR=1A,Irr=0.25A | 32 | ns | ||
| trr | Reverse Recovery time | IF=1A,VR=30V, diF/dt =200A/us | 24 | ns | ||
| trr | Reverse Recovery Time | IF=10A, VR=400V, diF/dt=200A/s | 76 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=10A, VR=400V, diF/dt=200A/s | 4.8 | A | ||
| Qrr | Reverse Recovery Charge | IF=10A, VR=400V, diF/dt=200A/s | 223 | nC | ||
| trr | Reverse Recovery Time | IF=10A, VR=400V, diF/dt=200A/s, Tj=125 | 105 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=10A, VR=400V, diF/dt=200A/s, Tj=125 | 7.9 | A | ||
| Qrr | Reverse Recovery Charge | IF=10A, VR=400V, diF/dt=200A/s, Tj=125 | 495 | nC | ||
| trr | Reverse Recovery Time | IF=10A, VR=400V, diF/dt=600A/s, Tj=125 | 60 | ns | ||
| IRRM | Max. Reverse Recovery Current | IF=10A, VR=400V, diF/dt=600A/s, Tj=125 | 19 | A | ||
| Qrr | Reverse Recovery Charge | IF=10A, VR=400V, diF/dt=600A/s, Tj=125 | 646 | nC | ||
2410122008_JSCJ-MURD10H60_C5370824.pdf
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