Schottky barrier diode JSCJ SD101AW featuring low forward voltage drop and transient protection
Key Attributes
Model Number:
SD101AW
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@50V
Non-Repetitive Peak Forward Surge Current:
2A
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
1V@15mA
Current - Rectified:
15mA
Mfr. Part #:
SD101AW
Package:
SOD-123
Product Description
Product Overview
The SD101AW is a Schottky barrier diode designed for low forward voltage drop and negligible reverse recovery time. It features guard ring construction for transient protection, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-123
- Marking: S1
- Cathode Indicator: Marking bar
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Peak Repetitive Peak Reverse Voltage | VRRM | 60 | V | |
| Working Peak Reverse Voltage | VRWM | 60 | V | |
| DC Blocking Voltage | VR | 60 | V | |
| RMS Reverse Voltage | VR(RMS) | 42 | V | |
| Forward Continuous Current | IFM | 15 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 2.0 | A | @t=8.3ms |
| Power Dissipation | Pd | 400 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 250 | /W | |
| Reverse breakdown voltage | VR | 60 | V | IR=10A |
| Forward voltage | VF | 0.41 | V | IF=1.0mA |
| Forward voltage | VF | 1.00 | V | IF=15mA |
| Reverse current | IRM | 0.2 | A | VR=50V |
| Capacitance between terminals | CT | 2.0 | pF | VR=0V,f=1.0MHz |
| Reverse recovery time | trr | 1.0 | ns | IF=IR=5mA, Irr=0.1XIR,RL=100 |
| Storage Temperature Range | TSTG | -55 ~ +150 | ||
| Operating Junction Temperature Range | Tj | -40 ~ +125 |
2410121548_JSCJ-SD101AW_C3031887.pdf
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