Schottky Barrier Diode JSCJ SD103ATW Low Forward Voltage Drop Fast Switching and Low Leakage Current

Key Attributes
Model Number: SD103ATW
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
5uA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
500mV@100mA
Current - Rectified:
175mA
Mfr. Part #:
SD103ATW
Package:
SOT-363
Product Description

Product Overview

The SD103ATW is a Schottky Barrier Diode featuring low forward voltage drop, guard ring construction for transient protection, fast switching, and low leakage current. It is designed for applications requiring efficient rectification and protection.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
  • Package: SOT-363
  • Marking: KLL
  • Pin 1 Indicator: Solid dot

Technical Specifications

ParameterSymbolMinTypMaxUnitConditions
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Peak Repetitive Peak Reverse VoltageVRRM40V
Working Peak Reverse VoltageVRWM40V
DC Blocking VoltageVR40V
RMS Reverse VoltageVR(RMS)28V
Forward Continuous CurrentIFM350mA
Average Rectified CurrentIO175mA
Non-repetitive Peak Forward Surge Current @t=8.3msIFSM2A
Power DissipationPd200mW
Thermal Resistance Junction to AmbientRJA500/W
Operating Junction Temperature RangeTj-40+125
Storage Temperature RangeTSTG-55+150
Electrical Ratings @Ta=25
Reverse breakdown voltageV(BR)40VIR=100A
Forward voltageVF0.370.50VIF=20mA
Forward voltageVFVIF=100mA
Reverse currentIR2.05.0AVR=10V
Reverse currentIRAVR=30V
Capacitance between terminalsCT50pFVR=0V,f=1.0MHz
Reverse recovery timetrr10nsIF=IR=200mA Irr=0.1XIR,RL=100

2410121931_JSCJ-SD103ATW_C3034813.pdf

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