Schottky barrier diode JSCJ RB501V-40 low voltage low inductance diode for power supply applications
Key Attributes
Model Number:
RB501V-40
Product Custom Attributes
Reverse Leakage Current (Ir):
30uA@10V
Non-Repetitive Peak Forward Surge Current:
1A
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
RB501V-40
Package:
SOD-323
Product Description
Product Overview
The RB501V -40 is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for low current rectification. It features low voltage and low inductance, making it suitable for power supply applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: RB501V -40
- Package: SOD-323 Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Limit | Unit | Conditions |
| Peak reverse voltage | VRM | 45 | V | |
| DC reverse voltage | VR | 40 | V | |
| Mean rectifying current | IO | 0.1 | A | @Ta=25 |
| Peak forward surge current | IFSM | 1 | A | @Ta=25 |
| Forward voltage | VF | 0.55 | V | IF=100mA |
| Forward voltage | VF | 0.34 | V | IF=10mA |
| Reverse current | IR | 30 | A | VR=10V @Ta=25 |
| Capacitance between terminals | CT | 6 | pF | VR=10V, f=1MHZ @Ta=25 |
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Power dissipation | PD | 200 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RJA | 500 | /W |
2410121333_JSCJ-RB501V-40_C8528.pdf
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