Ultrafast Recovery Rectifier JSCJ MURD8H60 for Solar Inverter Boosters and Battery Charging Stations
Key Attributes
Model Number:
MURD8H60
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA@600V
Non-Repetitive Peak Forward Surge Current:
112A
Reverse Recovery Time (trr):
25ns
Voltage - DC Reverse (Vr) (Max):
600V
Operating Junction Temperature Range:
-55℃~+175℃
Pd - Power Dissipation:
77W
Voltage - Forward(Vf@If):
1.6V@8A
Current - Rectified:
8A
Mfr. Part #:
MURD8H60
Package:
TO-252-2L
Product Description
Product Overview
The MURD8H60 is a HYPERFAST RECTIFIER, FRED designed for high-efficiency applications. It features ultrafast recovery times, low recovery loss, low forward voltage, and low reverse leakage current. This device is specifically engineered for the PFC and output rectification stages of EV/HEV battery charging stations, booster stages of solar inverters, and UPS applications, making it an ideal match for MOSFETs or high-speed IGBTs.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: MURD8H60
- Package: TO-252-2L Plastic-Encapsulate Diode
- Marking: MURD8H60
- Molding Compound: Solid dot = Green molding compound device if none, the normal device
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VRRM | Peak Repetitive Reverse Voltage | 600 | V | |||
| VR | DC Blocking Voltage | V | ||||
| IF(AV) | Average Forward Current | (TC=150) | 8 | A | ||
| IF(RMS) | RMS Forward Current | (TC=150) | 11 | A | ||
| IFSM | Non-Repetitive Surge Forward Current | (8.3ms | 112 | A | ||
| PD | Power dissipation | 77 | W | |||
| RJC | Thermal Resistance From Junction to Case | 1.95 | /W | |||
| Tj | Operating Junction Temperature Range | -55 | +175 | |||
| Tstg | Storage Temperature Range | -55 | +175 | |||
| V(BR) | Reverse Voltage | IR=100A | 600 | V | ||
| IR | Reverse Current | VR=600V Tj=25 | 10 | A | ||
| Tj=150 | 500 | A | ||||
| VF | Forward Voltage | IF=8A Tj=25 | 1.25 | V | ||
| Tj=150 | 1.06 | V | ||||
| Ctot | Total Capacitance | VR=200V, f=1MHz | 8 | pF | ||
| trr | Reverse Recovery time | IF=0.5A, IR=1A,Irr=0.25A | 34 | ns | ||
| IF=1A,VR=30V, diF/dt =200A/us | 25 | ns | ||||
| trr | Reverse Recovery Time | IF=8A, VR=400V, diF/dt=200A/s | 68 | ns | ||
| Tj=125 | 97 | ns | ||||
| diF/dt=500A/s, Tj=125 | 74 | ns | ||||
| IRRM | Max. Reverse Recovery Current | IF=8A, VR=400V, diF/dt=200A/s | 4.9 | A | ||
| Tj=125 | 8 | A | ||||
| diF/dt=500A/s, Tj=125 | 13 | A | ||||
| Qrr | Reverse Recovery Charge | IF=8A, VR=400V, diF/dt=200A/s | 185 | nC | ||
| Tj=125 | 433 | nC | ||||
| diF/dt=500A/s, Tj=125 | 562 | nC |
2410122008_JSCJ-MURD8H60_C5370822.pdf
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