Low forward voltage drop Schottky diode array JSCJ BAS40TW suitable for fast switching applications
Key Attributes
Model Number:
BAS40TW
Product Custom Attributes
Reverse Leakage Current (Ir):
200nA@30V
Voltage - DC Reverse (Vr) (Max):
40V
Operating Junction Temperature Range:
-40℃~+125℃
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40TW
Package:
SOT-363
Product Description
Product Overview
The BAS40TW/DW-04/DW-05/DW-06/BRW is a Schottky barrier diode array designed for low forward voltage drop and fast switching applications. It is suitable for general-purpose rectification and switching where high speed and low power loss are critical.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: CHINA
- Package Type: SOT-363
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| Non-Repetitive Peak Reverse Voltage | VRM | 40 | V | ||
| DC Blocking Voltage | VR | 40 | V | ||
| Average Rectified Output Current | IO | 200 | mA | ||
| Power Dissipation | Pd | 200 | mW | ||
| Junction to Ambient Air Thermal Resistance | RJA | 500 | /W | ||
| Operating Junction Temperature Range | TJ | -40 | +125 | ||
| Storage Temperature Range | TSTG | -55 | +150 | ||
| Reverse Breakdown Voltage | V(BR) | IR= 10A | 40 | V | |
| Reverse Voltage Leakage Current | IR | VR=30V | 200 | nA | |
| Forward Voltage | VF | IF=1mA | 0.380 | V | |
| IF=40mA | 1.000 | ||||
| Total Capacitance | CT | VR=0,f=1MHz | 5 | pF | |
| Reverse Recovery Time | trr | IF= IR=10mA, Irr=0.1IR,RL=100 | 5 | nS |
2410121931_JSCJ-BAS40TW_C3031904.pdf
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