Switching Diode Plastic Encapsulated JSCJ AD BAV70W with High Conductance and AEC Q101 Qualification

Key Attributes
Model Number: AD-BAV70W
Product Custom Attributes
Reverse Leakage Current (Ir):
2.5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
AD-BAV70W
Package:
SOT-323
Product Description

Product Overview

The AD-BAV70W is a plastic-encapsulated switching diode designed for general-purpose switching applications. It offers high switching speed and high conductance, and is AEC-Q101 qualified.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
  • Product Code: AD-BAV70W
  • Marking: KJA
  • Certifications: AEC-Q101 qualified

Technical Specifications

ParameterSymbolTest conditionMinTypMaxUnit
Non-repetitive peak reverse voltageVRM100V
Peak repetitive peak reverse voltageVRRM75V
Working peak reverse voltageVRWM75V
DC blocking voltageVR75V
RMS reverse voltageVR(RMS)53V
Forward continuous currentIFM300mA
Non-repetitive peak forward surge currentIFSM@ t = 8.3ms2.0A
Average rectified output currentIO150mA
Power dissipationPD200mW
Thermal resistance from junction to ambientRJA625C/W
Operating junction and storage temperature rangeTj, Tstg-55150C
Reverse breakdown voltageVBRIR = 100A75V
Forward voltageVF1IF = 1mA0.715V
Forward voltageVF2IF = 10mA0.855V
Forward voltageVF3IF = 50mA1V
Forward voltageVF4IF = 150mA1.25V
Reverse currentIR1VR = 75V2.5A
Reverse currentIR2VR = 25V25nA
Capacitance between terminalsCTVR = 0V, f = 1MHz2pF
Reverse recovery timetrrIF = IR = 10mA, Irr = 1mA, RL = 1004ns

2410121913_JSCJ-AD-BAV70W_C2975711.pdf

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