General purpose rectifier diode JSCJ S1MF designed with plastic encapsulation and high reliability
Key Attributes
Model Number:
S1MF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@1kV
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
1kV
Voltage - Forward(Vf@If):
1V@1A
Current - Rectified:
1A
Mfr. Part #:
S1MF
Package:
DO-214AD
Product Description
Product Overview
The S1AF THRU S1MF series are general-purpose rectifier diodes designed for high surge current capability. They feature a plastic encapsulation and are suitable for applications requiring efficient rectification and high reliability.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Marking: S1X X : From A To M
- Polarity: Color band denotes cathode
- Origin: Not specified
- Material: Plastic-Encapsulate Diodes
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Item | Symbol | Unit | Test Condition | S1AF | S1BF | S1DF | S1GF | S1KF | S1MF |
| Maximum RMS Voltage | VRM | V | RMS | 50 | 100 | 200 | 400 | 600 | 1000 |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 100 | 200 | 400 | 600 | 1000 | |
| Average Forward Current | IF(AV) | A | Ta =25 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 |
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave 1 cycleTa=25 | 15 | 15 | 15 | 15 | 15 | 15 |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | -55 ~ +150 | ||
| Peak Forward Voltage | VF | V | IF =1.0A | 1.0 MAX | 1.0 MAX | 1.0 MAX | 1.0 MAX | 1.0 MAX | 1.0 MAX |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Ta =25 | 50 MAX | 50 MAX | 50 MAX | 50 MAX | 50 MAX | 50 MAX |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Ta =125 | 1000 MAX | 1000 MAX | 1000 MAX | 1000 MAX | 1000 MAX | 1000 MAX |
| Thermal Resistance(Typical) | RJ-A | / W | Between junction and ambient mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas | 70 | 70 | 70 | 70 | 70 | 70 |
| Thermal Resistance(Typical) | RJ-L | / W | Between junction and lead | 25 | 25 | 25 | 25 | 25 | 25 |
2410121738_JSCJ-S1MF_C2923885.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
