SOD123 Schottky diode JSCJ B5818W plastic encapsulated for high frequency low voltage and free wheeling
Key Attributes
Model Number:
B5818W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@30V
Operating Junction Temperature Range:
-40℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
875mV@3A
Current - Rectified:
1A
Mfr. Part #:
B5818W
Package:
SOD-123
Product Description
Product Overview
The B5817W-5819W series are SOD-123 plastic-encapsulated Schottky barrier diodes designed for low voltage, high frequency applications. They are suitable for inverters, free-wheeling, and polarity protection.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOD-123
- Material: Plastic-Encapsulate
- Marking (B5817W): SJ
- Marking (B5818W): SK
- Marking (B5819W): SL
- Cathode Indicator: Marking bar
- Molding Compound: Solid dot = Green, None = Normal
Technical Specifications
| Parameter | Symbol | B5817W | B5818W | B5819W | Unit |
| Maximum Ratings and Electrical Characteristics (Single Diode @Ta=25) | |||||
| Non-Repetitive Peak Reverse Voltage | VRM | 20 | 30 | 40 | V |
| Peak Repetitive Peak Reverse Voltage / Working Peak Reverse Voltage | VRRM / VRWM | 20 | 30 | 40 | V |
| DC Blocking Voltage | VR | 20 | 30 | 40 | V |
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | V |
| Average Rectified Output Current | IO | 1 | A | ||
| Repetitive Peak Forward Current | IFRM | 1.5 | A | ||
| Power Dissipation | PD | 500 | mW | ||
| Thermal Resistance Junction to Ambient | RJA | 200 | /W | ||
| Operation Junction temperature Range | TJ | -40~+125 | |||
| Storage Temperature Range | TSTG | -55~+150 | |||
| Non-Repetitive Peak Forward Surge Current @t=8.3ms | IFSM | 9 | A | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | |||||
| Reverse breakdown voltage (IR= 1mA) | V(BR) | 20 | 30 | 40 | V |
| Reverse voltage leakage current (VR=20V for B5817W, VR=30V for B5818W, VR=40V for B5819W) | IR | 1 | mA | ||
| Forward voltage (VF) | IF=1A | 0.45 | 0.55 | 0.6 | V |
| IF=3A | 0.75 | 0.875 | 0.9 | ||
| Diode capacitance (VR=4V, f=1MHz) | CD | 120 | pF | ||
2410121912_JSCJ-B5818W_C2910074.pdf
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