High Current Schottky Rectifier JSCJ SBD20H200CTB with 200 Volt Reverse Voltage and Low Forward Drop
Key Attributes
Model Number:
SBD20H200CTB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Reverse Leakage Current (Ir):
500nA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
900mV@10A
Current - Rectified:
20A
Mfr. Part #:
SBD20H200CTB
Package:
TO-220-3L
Product Description
Product Overview
The SBD20H200CTB and SBDF20H200CTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature a Guard Ring Die Construction for transient protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Codes: SBD20H200CTB, SBDF20H200CTB
- Package Types: TO-220-3L, TO-220F
- Marking: SBD20H200CTB XXXX, SBD F20H200CTB XXXX (Device code XXXX, Solid dot = Green molding compound device if none, the normal device)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Peak repetitive reverse voltage | VRRM | 200 | V | |||
| Working peak reverse voltage | VRWM | V | ||||
| DC blocking voltage | VR | 200 | V | |||
| RMS reverse voltage | VR(RMS) | 140 | V | |||
| Average rectified output current | IO | 20 | A | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 200 | A | |||
| Reverse voltage breakdown | V(BR) | IR = 1mA | 200 | V | ||
| Reverse current | IR | VR = 200V, Tj = 25 | 0.1 | uA | ||
| Reverse current | IR | VR = 200V, Tj = 150 | 0.01 | mA | ||
| Forward voltage | VF | IF = 10A, Tj = 25 | 0.78 | V | ||
| Forward voltage | VF | IF = 10A, Tj = 150 | 0.60 | V | ||
| Forward voltage | VF | IF = 20A, Tj = 25 | 0.84 | V | ||
| Forward voltage | VF | IF = 20A, Tj = 150 | 0.67 | V | ||
| Thermal resistance junction to ambient | RJA | 50 | /W | |||
| Thermal resistance junction to case | RJc | Tc = 25 | 2.0 | 3.0 | /W | |
| Junction temperature | Tj | -55 | 175 | |||
| Storage temperature | Tstg | -55 | 175 | |||
| Total Capacitance | CTOT | VR = 10V, f = 1MHz, Tj = 25 | 75 | pF |
2410121815_JSCJ-SBD20H200CTB_C5295501.pdf
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