Schottky Barrier Rectifier JSCJ SBD40100TCTB with Low Forward Voltage Drop and High Current Capability
Key Attributes
Model Number:
SBD40100TCTB
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@100V
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
1 Pair Common Cathode
Voltage - Forward(Vf@If):
670mV@20A
Current - Rectified:
40A
Mfr. Part #:
SBD40100TCTB
Package:
TO-220-3L
Product Description
Product Overview
The SBD40100TCTB is a Schottky Barrier Rectifier designed for low power loss and high efficiency, offering high current capability and a low forward voltage drop. Its guard ring die construction provides transient protection, making it suitable for applications requiring reliable rectification. The device is available in a TO-220-3L package.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: SBD40100TCTB
- Marking: 40100TCTB XXXX (XXXX = Code)
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Package: TO-220-3L Plastic-Encapsulate Diodes
- Origin: www.jscj-elec.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Peak repetitive reverse voltage | VRRM | 100 | V | |||
| Working peak reverse voltage | VRWM | 100 | V | |||
| DC blocking voltage | VR | 100 | V | |||
| RMS reverse voltage | VR(RMS) | 70 | V | |||
| Average rectified output current | IO | 40 (2x20) | A | |||
| Non-Repetitive peak forward surge current (8.3ms half sine wave) | IFSM | 250 | A | |||
| Thermal resistance from junction to ambient | RJA | 62.5 | /W | |||
| Junction temperature | Tj | 150 | ||||
| Storage temperature | Tstg | -55 | +150 | |||
| Reverse voltage | V(BR) | IR=0.1mA | 100 | V | ||
| Reverse current | IR | VR=100V | 0.50 | 1.0 | uA | |
| Forward voltage | VF | IF=10A, Tj=25 | 0.53 | V | ||
| Forward voltage | VF | IF=10A, Tj=125 | 0.64 | V | ||
| Forward voltage | VF | IF=20A, Tj=25 | 0.67 | V | ||
| Forward voltage | VF | IF=20A, Tj=125 | 0.72 | V | ||
| Thermal resistance from junction to case | RJc | Tc=25 | 2.0 | /W | ||
| Total Capacitance | CTOT | f = 1 MHz, Tj = 25 | 2000 | pF |
2410121810_JSCJ-SBD40100TCTB_C2924062.pdf
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