Plastic encapsulated switching diode JSCJ DAN222 suitable for high density electronic layouts
Key Attributes
Model Number:
DAN222
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
100nA@70V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Common Cathode
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
100mA
Mfr. Part #:
DAN222
Package:
SOT-523-3
Product Description
Product Overview
The DAN222 is a high-speed switching diode in a SOT-523 plastic-encapsulated package. It offers high reliability and is suitable for high packing density layouts. Available in four types of packaging, this diode is designed for efficient switching applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China
- Marking: Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR= 100A | 80 | V | |
| Reverse voltage leakage current | IR | VR=70V | 0.1 | A | |
| Forward voltage | VF | IF=100mA | 1.2 | V | |
| Diode capacitance | CD | VR=0, f=1MHz | 3.5 | pF | |
| Reverse recovery time | trr | VR=6V, IF=IR=5mA | 4 | ns | |
| Non-Repetitive Peak Reverse Voltage | VRM | @Ta=25 | 80 | V | |
| DC Blocking Voltage | VR | @Ta=25 | 80 | V | |
| Forward Continuous Current | IFM | @Ta=25 | 300 | mA | |
| Average Rectified Output Current | IO | @Ta=25 | 100 | mA | |
| Power Dissipation | PD | @Ta=25 | 150 | mW | |
| Junction Temperature | TJ | 150 | |||
| Storage Temperature Range | TSTG | -55 | +150 | ||
| Thermal resistance (Junction to ambient) | RJA | 833 | /W | ||
| Forward Surge Current (Non-Repetitive Peak, @t=8.3ms) | IFSM | 2.0 | A |
2410121317_JSCJ-DAN222_C68999.pdf
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