High Speed Switching Diode JSCJ AD BAV70 Plastic Encapsulated Diode for General Purpose Applications
Key Attributes
Model Number:
AD-BAV70
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@70V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
70V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
AD-BAV70
Package:
SOT-23
Product Description
Product Overview
The AD-BAW56/V70/V99 is a plastic-encapsulated switching diode designed for general-purpose switching applications. It offers high switching speed and high conductance, and is AEC-Q101 qualified.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Model Numbers: AD-BAW56, AD-BAV70, AD-BAV99
- Packaging: Plastic-Encapsulated
- Certifications: AEC-Q101 qualified
- Origin: China
Technical Specifications
| Parameter | Symbol | AD-BAW56/V70/V99 | Unit | Test Condition |
| Peak repetitive reverse voltage | VRRM | 70 | V | |
| Forward continuous current | IFM | 200 | mA | |
| Non-repetitive peak forward surge current | IFSM | 2 | A | @ t = 8.3ms |
| Power dissipation | PD | 225 | mW | |
| Thermal resistance junction to ambient | RJA | 556 | C/W | 1) |
| Operating junction and storage temperature range | Tj, Tstg | -55 ~ 150 | C | |
| Reverse breakdown voltage | VBR | 70 | V | IR = 100A |
| Forward voltage | VF1 | 0.715 | V | IF = 1mA |
| VF2 | 0.855 | V | IF = 10mA | |
| VF3 | 1 | V | IF = 50mA | |
| VF4 | 1.25 | V | IF = 150mA | |
| Reverse current | IR | 2.5 | A | VR = 70V |
| Capacitance between terminals | CT | 1.5 | pF | VR = 0V, f = 1MHz |
| Reverse recovery time | trr | 6 | ns | IF = IR = 10mA, Irr = 1mA, RL = 100 |
1) Measured with the device mounted on 1 inch2 FR-4 board with 1oz. single-side copper, in a still air environment with Ta = 25.
2411121102_JSCJ-AD-BAV70_C2975642.pdf
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