N Channel Power MOSFET JSCJ CJT04N15 with Trench Technology and Plastic Encapsulated SOT 223 Package

Key Attributes
Model Number: CJT04N15
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
70pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
900pF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
CJT04N15
Package:
SOT-223
Product Description

Product Overview

The CJT04N15 is an N-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The SOT-223 package provides good heat dissipation, making it suitable for a wide variety of applications.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD (CJT)
  • Package Type: SOT-223
  • Material: Plastic-Encapsulate
  • Device Code: T04N15
  • Code: 151

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Maximum Ratings
Drain-Source VoltageVDS150V
Gate-Source VoltageVGS20V
Continuous Drain CurrentID4A
Pulsed Drain Current (note1)IDM16A
Thermal Resistance Junction to AmbientRJA125/W
Junction TemperatureTJ150
Maximum lead temperature for soldering purposes, 1/8 from case for 5 secondsTL260
Storage Temperature RangeTSTG-55+150
Off Characteristics
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =250A150V
Drain-source diode forward voltage(note2)VSDVGS = 0V, IS =2.0A1.2V
Zero gate voltage drain currentIDSSVDS =150V, VGS =0V1A
Gate-body leakage current (note2)IGSSVDS =0V, VGS =20V100nA
On Characteristics (note2)
Gate-threshold voltageVGS(th)VDS =VGS, ID =250A1.52.02.5V
Static drain-source on-resistanceRDS(on)VGS =10V, ID =4.0A130160m
Forward transconductancegfsVDS =15V, ID =4A5S
Dynamic Characteristics (note 3)
Input capacitanceCissVDS =25V,VGS =0V,f =1MHz900pF
Output capacitanceCoss115
Reverse transfer capacitanceCrss70
Switching Characteristics (note 3)
Total gate chargeQgVDS =75V,VGS =10V,ID =1.5A19nC
Gate-source chargeQgs5.5
Gate-drain chargeQg d7
Turn-on delay time (note3)td(on)VDS=75V, VGS=10V, RG=6, ID =1.0A,RL=758ns
Turn-on rise time (note3)tr10
Turn-off delay time (note3)td(off)20
Turn-off fall time (note3)tf15

2410121317_JSCJ-CJT04N15_C81507.pdf

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