Power MOSFET JSCJ CJU40P04A P Channel device optimized for notebook computers and portable equipment

Key Attributes
Model Number: CJU40P04A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Output Capacitance(Coss):
480pF
Input Capacitance(Ciss):
4.6nF
Pd - Power Dissipation:
74W
Gate Charge(Qg):
46nC@4.5V
Mfr. Part #:
CJU40P04A
Package:
TO-252-2L
Product Description

Product Overview

The CJU40P04A is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Key features include a high-density cell design for ultra-low on-resistance and a reliable, rugged construction.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Device Code: U40P04A
  • Package Type: TO-252-2L
  • Molding Compound: Green (if solid dot present)

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Off Characteristics
Drain-source breakdown voltageV(BR)DSSVGS = 0V, ID =-250A-40V
Gate-body leakage currentIGSSVDS =0V, VGS =20V100nA
Zero gate voltage drain currentIDSSVDS =-32V, VGS =0V1.0A
On Characteristics
Gate-threshold voltageVGS(th)VDS =VGS, ID =-250A-1.0-1.5-2.5V
Static drain-source on-state resistanceRDS(on)VGS =-10V, ID =-10A10.515m
Static drain-source on-state resistanceRDS(on)VGS =-4.5V, ID =-8A1422m
Dynamic Characteristics
Input capacitanceCissVDS =-25V,VGS =0V, f =1MHz2800pF
Output capacitanceCossVDS =-25V,VGS =0V, f =1MHz4600pF
Reverse transfer capacitanceCrssVDS =-25V,VGS =0V, f =1MHz480pF
Switching Characteristics
Total gate chargeQgVDS=-32V, VGS=-4.5V, ID=-10A23nC
Gate-source chargeQgsVDS=-32V, VGS=-4.5V, ID=-10A9.0nC
Gate-drain chargeQg dVDS=-32V, VGS=-4.5V, ID=-10A8.8nC
Turn-on delay timetd(on)VDD=-20V,VGS=-10V, RG=6, ID=-1A24ns
Turn-on rise timetrVDD=-20V,VGS=-10V, RG=6, ID=-1A12ns
Turn-off delay timetd(off)VDD=-20V,VGS=-10V, RG=6, ID=-1A140ns
Turn-off fall timetfVDD=-20V,VGS=-10V, RG=6, ID=-1A48ns
Drain-Source Diode Characteristics
Drain-source diode forward voltageVSDVGS =0V, IS= -1.2A-1.0-1.2V
Continuous drain-source diode forward currentIS-40A
Pulsed drain-source diode forward currentISM-160A

2410121931_JSCJ-CJU40P04A_C3034804.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.