power management solution JSCJ CJU50P06 P channel power mosfet with low gate charge and rugged design
Key Attributes
Model Number:
CJU50P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
760pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
7.5nF@25V
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
CJU50P06
Package:
TO-252-2L
Product Description
Product Overview
The CJU50P06 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers and portable, battery-powered systems. Its reliable and rugged design with a high-density cell structure ensures ultra-low On-Resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: U50P06
- Marking: U50P06 = Device code, Solid dot = Green molding compound device (if present)
Technical Specifications
| Parameter | Symbol | Test Condition | Limit | Unit |
| Drain-Source Voltage | VDS | -60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | -50 | A | |
| Pulsed Drain Current | IDM | -200 | A | |
| Single Pulsed Avalanche Energy | EAS | 196 | mJ | |
| Power Dissipation | PD | 75 | W | |
| Thermal Resistance Junction to Ambient | RθJA | 100 | °C/W | |
| Thermal Resistance Junction to Case | RθJC | 1.66 | °C/W | |
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55~+150 | °C | |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -60 | V |
| Zero gate voltage drain current | IDSS | VDS =-48V, VGS =0V | 1.0µA | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA |
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 -2.2 -3.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =-10V, ID =-20A | 25 | mΩ |
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 4500 | pF |
| Output capacitance | Coss | 705 | ||
| Reverse transfer capacitance | Crss | 72 | ||
| Total gate charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 5.7 | nC |
| Gate-source charge | Qgs | 515 | ||
| Gate-drain charge | Qg | 72 | ||
| Turn-on delay time | td(on) | VDD=-30V,RG=3Ω RL=1.5Ω,VGS=-10V, Rg | 15 | ns |
| Turn-on rise time | tr | 17 | ||
| Turn-off delay time | td(off) | 16 | ||
| Turn-off fall time | tf | 18 | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-20A | -1.2 | V |
| Continuous drain-source diode forward current | IS | -50 | A | |
| Pulsed drain-source diode forward current | ISM | -200 | A |
2410121912_JSCJ-CJU50P06_C2910357.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
