P Channel MOSFET JSCJ CJQ9435 featuring ultra low gate resistance and superior body diode characteristics
Key Attributes
Model Number:
CJQ9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-40℃~+150℃
RDS(on):
105mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
CJQ9435
Package:
SOP-8
Product Description
Product Overview
The CJQ9435 is a P-Channel Power MOSFET from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology. It offers excellent RDS(ON), shoot-through immunity, superior body diode characteristics, and ultra-low gate resistance. This device is designed for use as a low-side switch in Notebook CPU core power conversion, and is also suitable for battery switch and load switch applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJQ9435
- Package: SOP8 Plastic-Encapsulate
- Material: MOSFET
- Color: Normal device (if no solid dot), Green molding compound device (if solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.5 | -2.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-4.6A | 50 | 60 | m | |
| VGS =-6V, ID =-4.1A | 60 | 70 | m | |||
| VGS =-4.5V, ID =-2A | 65 | 105 | m | |||
| Forward transconductance | gFS | VDS =-15V, ID =-4.6A | 5 | S | ||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=-15V, VGS=-10V, ID=-4.6A | 40 | nC | ||
| Gate-source charge | Qgs | 4 | nC | |||
| Gate-drain charge | Qgd | 6.3 | nC | |||
| Turn-on delay time | td(on) | VDD=-15V,ID=-1A, VGS=-10V,RG=6, RL=15 | 30 | ns | ||
| Turn-on rise time | tr | 60 | ns | |||
| Turn-off delay time | td(off) | 120 | ns | |||
| Turn-off fall time | tf | 100 | ns | |||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 5.8 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2.6A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -5.1 | A | |||
| Pulsed drain-source diode forward current | ISM | -20 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Ta=25 unless otherwise noted | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -5.1 | A | |||
| Pulsed Drain Current | IDM | -20 | A | |||
| Single Pulsed Avalanche Energy | EAS(1) | 20 | mJ | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 89 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | |||
2410121442_JSCJ-CJQ9435_C114071.pdf
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