P Channel Power MOSFET JSCJ CJU65P06 Featuring Low Gate Charge and Performance in Portable Equipment
Key Attributes
Model Number:
CJU65P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Number:
1 P-Channel
Output Capacitance(Coss):
980pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
9.5nF
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
CJU65P06
Package:
TO-252-2L
Product Description
Product Overview
The CJU65P06 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers and portable, battery-powered equipment.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: U65P06
- Package: TO-252-2L
- Material: Plastic-Encapsulate MOSFETS
- Color: Green molding compound (if solid dot present)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -65 | A | |||
| Pulsed Drain Current | IDM | -260 | A | |||
| Single Pulsed Avalanche Energy | EAS | 480 | mJ | |||
| Power Dissipation | PD | 120 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 100 | °C/W | |||
| Thermal Resistance Junction to Case | RJC | 1.04 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-48V, VGS =0V | 18 | 100 | µA | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -2.2 | -3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-20A | 13 | mΩ | ||
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 5900 | pF | ||
| Output capacitance | Coss | 9500 | ||||
| Reverse transfer capacitance | Crss | 980 | ||||
| Total gate charge | Qg | VGS=-10V, VDS=-30V, ID=-20A | 76 | nC | ||
| Gate-source charge | Qgs | 18 | ||||
| Gate-drain charge | Qg d | 20 | ||||
| Turn-on delay time | td(on) | VDD=-30V,RG=3Ω RL=1.5Ω,VGS=-10V, Rg | 19 | ns | ||
| Turn-on rise time | tr | 22 | ||||
| Turn-off delay time | td(off) | 56 | ||||
| Turn-off fall time | tf | 36 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-20A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -65 | A | |||
| Pulsed drain-source diode forward current | ISM | -260 | A |
2410121913_JSCJ-CJU65P06_C2981813.pdf
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