P channel MOSFET JSCJ CJ2333 in compact SOT 23 package for battery switches and portable electronics
Key Attributes
Model Number:
CJ2333
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
236pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.275nF@6V
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
21nC@4.5V
Mfr. Part #:
CJ2333
Package:
SOT-23
Product Description
Product Overview
The CJ2333 is a P-channel MOSFET in a SOT-23 package, designed for applications requiring excellent RDS(on) and low gate charge. It is suitable for DC/DC converters, load switches for portable devices, and battery switches.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJ2333
- Package Type: SOT-23
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -6 | A | |||
| Pulsed Drain Current | IDM | (t=300s) | -20 | A | ||
| Power Dissipation | PD | a. (Ta=25, FR-4 substrate) | 0.35 | W | ||
| Power Dissipation | PD | b. (Ta=25, no heat sink) | 1.1 | W | ||
| Thermal Resistance Junction to Ambient | RJA | a. (FR-4 substrate) | 113 | /W | ||
| Thermal Resistance Junction to Ambient | RJA | b. (no heat sink) | 357 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -12 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-12V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 0.1 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-5A | 28 | m | ||
| VGS =-3.7V, ID =-4.6A | 32 | |||||
| VGS =-2.5V, ID =-4.3A | 40 | |||||
| VGS =-1.8V, ID =-1A | 63 | |||||
| VGS =-1.5V, ID =-0.5A | 150 | |||||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 18 | S | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS =-6V,VGS =0V,f =1MHz | 1275 | pF | ||
| Output Capacitance | Coss | 255 | ||||
| Reverse Transfer Capacitance | Crss | 236 | ||||
| Gate resistance | Rg | f =1MHz | 1.9 | 19 | ||
| Total Gate Charge | Qg | VDS =-6V,VGS =-4.5V,ID=-5A | 14 | 21 | nC | |
| Gate-Source Charge | Qgs | 2.3 | ||||
| Gate-Drain Charge | Qg d | 3.6 | ||||
| Switching times | Turn-on delay time | td(on) | 26 | 40 | ns | |
| Turn-on rise time | tr | 24 | 40 | |||
| Turn-off delay time | td(off) | 45 | 70 | |||
| Turn-off fall time | tf | VDD=-6V,VGEN=-4.5V,ID=-4A RL=6,RGEN=1 | 20 | 35 | ||
| Source-Drain Diode characteristics | ||||||
| Diode forward current | IS | TC=25 | -1.4 | A | ||
| Diode pulsed forward current | ISM | -20 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=-4A | -1.2 | V | ||
| Diode reverse recovery | trr | (note 2) | 24 | 48 | ns | |
| Qrr | IF=-4A,dI/dt=100A/s | 8 | 16 | nC | ||
2410121642_JSCJ-CJ2333_C77678.pdf
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