Compact N Channel TrenchFET Power MOSFET JSCJ CJMN3010 with Excellent Switching Characteristics
Key Attributes
Model Number:
CJMN3010
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
16mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
290pF
Number:
1 N-channel
Output Capacitance(Coss):
320pF
Input Capacitance(Ciss):
2.65nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
25nC@5V
Mfr. Part #:
CJMN3010
Package:
DFNWB2x2-6L
Product Description
Product Overview
The CJMN3010 is an N-Channel TrenchFET Power MOSFET designed for load switching in portable applications. It features a small DFNWB2x2-6L package and offers excellent performance with low on-resistance.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJMN3010
- Package: DFNWB2x2-6L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.6 | 2.5 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =5A | 9.4 | 12 | m | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5A | 12.8 | 16 | m | |
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 1338 | pF | ||
| Output Capacitance | Coss | VDS =15V,VGS =0V,f =1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =15V,VGS =0V,f =1MHz | 145 | pF | ||
| Gate Resistance | Rg | f=1MHz | 4.6 | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=1A | 12.5 | V | ||
| Continuous drain-source diode forward current | IS | 10 | A | |||
| Pulsed drain-source diode forward current | ISM | 40 | A | |||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | A | ||
| Continuous Drain Current | ID | Ta=25 | 10 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 40 | A | ||
| Single Pulsed Avalanche Energy | EAS | 50 | mJ | |||
| Thermal Resistance from Junction to Ambient | RJA | 90 | /W | |||
| Maximum Power Dissipation | PD | Ta=25 | 2.5 | W | ||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2410121839_JSCJ-CJMN3010_C19267752.pdf
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